Organic Semiconductor Interfaces and Their Effects in Organic Solar Cells

被引:2
作者
Wang, Chuanfei [1 ]
Li, Weidong [1 ]
Zeng, Qi [2 ]
Liu, Xianjie [3 ]
Fahlman, Mats [3 ]
Bao, Qinye [4 ,5 ]
机构
[1] Ocean Univ China, Sch Mat Sci & Engn, Qingdao 266100, Shandong, Peoples R China
[2] Shanghai Univ Engn Sci, Sch Mat Sci & Engn, Shanghai 201620, Peoples R China
[3] Linkoping Univ, Lab Organ Elect, ITN, S-60174 Norrkoping, Sweden
[4] East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
[5] Fudan Univ, Inst Optoelect, Shanghai Frontiers Sci Res Base Intelligent Optoe, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
Organic solar cells; Interfaces; Donor-acceptor systems; Electron transfer; Electronic Structures; Efficiency; ENERGY-LEVEL ALIGNMENT; CHARGE-TRANSFER; PHOTOVOLTAIC PERFORMANCE; INVERSE-PHOTOEMISSION; ELECTRONIC-STRUCTURE; CONJUGATED POLYMER; ACCEPTOR; EFFICIENT; PHOTODEGRADATION; RECOMBINATION;
D O I
10.1002/cjoc.202300347
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Energy levels and energy level alignment at interfaces play a decisive role in designing efficient and stable organic solar cells (OSCs). In this review two usually used technologies in organic photovoltaic communities for measuring energy levels of organic semiconductors, photoelectron spectroscopy and electrochemical methods, are introduced, and the relationships between the values obtained from the corresponding techniques are compared. The energy level and energy level alignment across the interfaces involved in solution processed organic photovoltaics are described, and the corresponding integer charge transfer model for predicting and explaining energy level alignment is presented. The effects of the interface properties in designing efficient binary and ternary OSCs were discussed. The effects of environmental factors mainly including water vapor, oxygen gas and thermal annealing on energy levels and energy level alignment involved in photoactive layers, and the subsequent effects on the corresponding OSC properties are given.
引用
收藏
页码:3792 / 3805
页数:14
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