Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

被引：0
|
作者：
Shim, Jae-Phil [1 ]
Kim, Dong-Seok [2 ]
Jang, Hyunchul [1 ]
Shin, Ju-Won [1 ]
Park, Deok-Soo [1 ]
Kim, Donghyun [1 ]
Shin, Chan-Soo [1 ]
Shin, Seung Heon [3 ]
机构：
[1] Korea Adv Nano Fab Ctr KANC, Device Technol Div, Suwon 16229, South Korea
[2] Korea Atom Energy Res Inst, Korea Multipurpose Accelerator Complex, Gyeongju 38180, South Korea
[3] Korea Polytech, Dept Semicond Proc Equipment, Semicond Convergence Campus, Anseong 17550, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
gamma-ray (gamma-ray); InGaAs HEMT; radiation; NFmin; high-frequency noise; RF noise; HEMTS;
D O I：
10.35848/1347-4065/ad1e89
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the effects of gamma-ray (gamma-ray) irradiation on an In0.53Ga0.47As high electron mobility transistor (HEMT). After gamma-ray radiation, the irradiated HEMT shows degradation of the maximum transconductance (g(m,max)), the unity current gain cutoff frequency (f(T)), and the maximum oscillation frequency (f(max))-about 12.8%, 18.0%, and 16.9%, respectively-because of an increase in on-resistance (R-on) in In0.53Ga0.47As HEMTs exposed to high-dose gamma-ray radiation. Moreover, we obtain a minimum noise figure (NFmin) of about 1 dB from 8 to 40 GHz for the irradiated HEMT, which is a lower value compared to a non-irradiated HEMT; this is because the gate leakage current is reduced after gamma-ray irradiation. (c) 2024 The Japan Society of Applied Physics
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页数：5
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