Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

被引：0
|
作者：
Shim, Jae-Phil [1 ]
Kim, Dong-Seok [2 ]
Jang, Hyunchul [1 ]
Shin, Ju-Won [1 ]
Park, Deok-Soo [1 ]
Kim, Donghyun [1 ]
Shin, Chan-Soo [1 ]
Shin, Seung Heon [3 ]
机构：
[1] Korea Adv Nano Fab Ctr KANC, Device Technol Div, Suwon 16229, South Korea
[2] Korea Atom Energy Res Inst, Korea Multipurpose Accelerator Complex, Gyeongju 38180, South Korea
[3] Korea Polytech, Dept Semicond Proc Equipment, Semicond Convergence Campus, Anseong 17550, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
gamma-ray (gamma-ray); InGaAs HEMT; radiation; NFmin; high-frequency noise; RF noise; HEMTS;
D O I：
10.35848/1347-4065/ad1e89
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the effects of gamma-ray (gamma-ray) irradiation on an In0.53Ga0.47As high electron mobility transistor (HEMT). After gamma-ray radiation, the irradiated HEMT shows degradation of the maximum transconductance (g(m,max)), the unity current gain cutoff frequency (f(T)), and the maximum oscillation frequency (f(max))-about 12.8%, 18.0%, and 16.9%, respectively-because of an increase in on-resistance (R-on) in In0.53Ga0.47As HEMTs exposed to high-dose gamma-ray radiation. Moreover, we obtain a minimum noise figure (NFmin) of about 1 dB from 8 to 40 GHz for the irradiated HEMT, which is a lower value compared to a non-irradiated HEMT; this is because the gate leakage current is reduced after gamma-ray irradiation. (c) 2024 The Japan Society of Applied Physics
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Remote Combined Effects of Coal Dust and High-Dose γ-Irradiation on Immune System Changes
    Chulenbayeva, Laura E.
    Ilderbayev, Oralbek Z.
    Suleymeneva, Dametken M.
    REVISTA GEINTEC-GESTAO INOVACAO E TECNOLOGIAS, 2021, 11 (02): : 192 - 203
  • [22] Pretreatment with High-Dose Gamma Irradiation on Seeds Enhances the Tolerance of Sweet Osmanthus Seedlings to Salinity Stress
    Geng, Xingmin
    Zhang, Yuemiao
    Wang, Lianggui
    Yang, Xiulian
    FORESTS, 2019, 10 (05)
  • [23] Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors
    Lee, Jonathan
    Yadav, Anupama
    Antia, Michael
    Zaffino, Valentina
    Flitsiyan, Elena
    Chernyak, Leonid
    Salzman, Joseph
    Meyler, Boris
    Ahn, Shihyun
    Ren, Fan
    Pearton, Stephen J.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2017, 172 (3-4): : 250 - 256
  • [24] Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors
    Gu Wen-Ping
    Zhang Jin-Cheng
    Wang Chong
    Feng Qian
    Ma Xiao-Hua
    Hao Yue
    ACTA PHYSICA SINICA, 2009, 58 (02) : 1161 - 1165
  • [25] Long-term effects of continuous low dose-rate gamma-ray irradiation on mouse hematopoietic cells
    Yanai, Takanori
    Kanaiwa-Kudo, Syouko
    Abe, Akiko
    Saitou, Mikio
    Nakamura, Shingo
    Tanaka, Satoshi
    Komura, Jun-Ichiro
    Kobayashi, Toshiyuki
    RADIATION PROTECTION DOSIMETRY, 2024, 200 (16-18) : 1603 - 1607
  • [26] Theoretical Analysis of Substrate Effects on the DC Performance of AlGaN/GaN High Electron Mobility Transistor
    Islam, Abu Syed Md. Jannatul
    Hasanuzzaman, S. M.
    Podder, Amit Kumer
    Islam, Md. Sherajul
    Bhuiyan, Ashraful Ghani
    2016 5TH INTERNATIONAL CONFERENCE ON INFORMATICS, ELECTRONICS AND VISION (ICIEV), 2016, : 961 - 966
  • [27] Doped State and Solubility Changes in PEDOT:PSS Thin Films by High-Energy Gamma-Ray Irradiation
    Jang, Hong
    Park, Juhyun
    Kim, Felix Sunjoo
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (09):
  • [28] Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
    Yang, Ling
    Zhou, Xiao-Wei
    Ma, Xiao-Hua
    Lv, Ling
    Cao, Yan-Rong
    Zhang, Jin-Cheng
    Hao, Yue
    CHINESE PHYSICS B, 2017, 26 (01)
  • [29] Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors
    Douglas, Erica A.
    Bielejec, Edward
    Frenzer, Patrick
    Yates, Bradley R.
    Pearton, Stephen J.
    Lo, Chien-Fong
    Liu, Lu
    Kang, Tsung-Sheng
    Ren, Fan
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (02):
  • [30] Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors
    Lv, Ling
    Ma, Xiaohua
    Xi, He
    Liu, Linyue
    Cao, Yanrong
    Zhang, Jincheng
    Shan, Hengsheng
    Hao, Yue
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (05):
12345