Femtosecond laser micromachining study with multiple wavelengths in CVD diamond

被引:9
作者
Nolasco, L. K. [1 ,2 ]
Couto, F. A. [2 ]
Andrade, M. B. [2 ]
Mendonca, C. R. [2 ]
机构
[1] Univ Sao Paulo, Sch Engn Sao Carlos, Dept Mat Engn, POB 359, BR-13563120 Sao Carlos, SP, Brazil
[2] Univ Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13561970 Sao Carlos, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
Fs-micromachining; Nonlinear optics; Wide bandgap semiconductor; Incubation effect; CVD diamond; MECHANICAL-PROPERTIES; ELECTRONIC-STRUCTURE; ABLATION THRESHOLD; OPTICAL-PROPERTIES; INDUCED BREAKDOWN; DAMAGE; DIELECTRICS; ABSORPTION; PULSES;
D O I
10.1016/j.diamond.2022.109589
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond is well known for its many remarkable mechanical, thermal, electric and optical properties. Among its remarkable characteristics, it also presents interesting nonlinear optical effects, thus being a highly desired material for many photonic devices. Therefore, femtosecond laser micromachining can be used as the processing method of such devices due to its high micron/sub-micron resolution. Thus, in this paper, the incubation effect (damage threshold fluence as a function of the number of applied fs-pulses) is studied at 1030, 515 and 343 nm with 216 fs pulses using the zero damage method. By implementing the exponential defect model, the incubation parameter was determined to be (0.14 +/- 0.03) at 1030 nm, (0.3 +/- 0.1) at 515 nm, and (0.13 +/- 0.04) at 343 nm, which indicates that at 515 nm, fewer fs-pulses are necessary to reach the minimum damage fluence value. In addition, a theoretical model of the electron density formed by a single fs-pulse was used to determine the main light-absorption mechanism at 343 nm. Consequently, this work adds to the knowledge of fs-laser micromachining of CVD diamond from near IR to UV.
引用
收藏
页数:6
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