Interface Engineering for Enhancing Air-Stable Spin-Charge Interaction in Molecular Spin-Photovoltaic Devices

被引:0
作者
Hu, Shunhua [1 ,2 ]
Qin, Yang [1 ]
Lu, Shuhang [3 ]
Guo, Lidan [1 ]
Gu, Xianrong [1 ]
Yang, Tingting [1 ,2 ]
Zhang, Rui [1 ,4 ]
Meng, Ke [1 ,2 ]
Zhang, Cheng [1 ]
Wu, Meng [1 ]
Sun, Xiangnan [1 ,2 ,3 ]
机构
[1] Natl Ctr Nanosci & Technol, Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450001, Peoples R China
[4] Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Solids, Beijing 100124, Peoples R China
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
air stability; interface engineering; molecular spintronics; spin and charge injection; spin-charge interactive functionality; SEMICONDUCTORS; INJECTION; TRANSPORT;
D O I
10.1002/adfm.202315239
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Molecular semiconductors (MSCs) are known as ideal candidates for constructing room-temperature spin-charge interactive devices due to their long spin lifetimes and abundant photoelectric properties. These devices can achieve novel and valuable functionalities such as room-temperature supply units of fully spin-polarized current. Unfortunately, their performances (sub-0.1 nA) remain unsatisfactory due to limited charge and spin injection efficiency, which can hardly be improved despite great efforts thus far. Herein, from the theoretical side, an interfacial tunnel layer with precisely-controlled barrier in spintronic devices may simultaneously enhance spin and charge injection. Accordingly, a solution-processed small molecule with smooth morphology and amorphous structure is introduced to form a uniform and well-controllable barrier in molecular spin-photovoltaic devices. By modulating the thickness to effectively control the barrier, both spin and charge injection efficiency increase by > 150%. Thus, the spin-charge interactive functionalities as supply units of fully spin-polarized current have also been significantly improved than the current record at room temperature, the output fully spin-polarized current (>2 nA) is 1200%-larger, and the output power increases by > 50 times. Moreover, the interface-modified spintronic devices exhibit excellent stability even after 70 days of exposure to air, which is essential for practical applications in the future.
引用
收藏
页数:8
相关论文
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