A single gate Si1-xGex dopingless TFET functioned as an effective label-free biosensor

This paper examines the sensitivity of a newly presented heterojunction dopingless tunnel field effect transistor (HJ-DLTFET) biosensor for the label-free detection of biomolecules. The etched nanocavity is introduced in the source metal region for better sensing ability. The dielectric constants (k) of five neutral biomolecules are employed in this paper to test the sensitivity of the proposed biosensor. The electrostatic performance is investigated based on transfer characteristics, energy band, tunneling distance (& lambda;) at source/channel (S/C) interface, drain current (I-D) variation for different dielectric constant (k), drain to source voltage (V-DS) variation and mole fraction (x) variation respectively. Further, the RF performance analysis includes gate/source capacitance (C-gs), total gate capacitance (C-gg), cut-off frequency (f(t)), and maximum frequency (f(m)) analysis. Similarly, sensitivity analysis consists of current sensitivity (S-ID), current ratio sensitivity (S-ratio), average SS sensitivity (S-SS), C-gs sensitivity, C-gg sensitivity, f(t) sensitivity, and f(m) sensitivity. The investigation is carried out with the variation of neutral biomolecules in terms of various k inside the cavity. Similarly, the impact of charged biomolecules on the sensitivity of the proposed biosensor is investigated. The HJ-DLTFET sensor provides the maximum sensitivity S-ID of 1.56 x 10(10), S-ratio of 5.95 x 10(9), and S-SS of 0.80 for Gelatin (k = 12.00) at room temperature using the Silvaco TCAD simulation tool. Combining a low band gap Si0.6Ge0.4 source with a high band gap silicon channel and a high-k (HfO2) improves drain current sensitivity without impacting leakage current.