Geometrically designed amorphous oxide semiconductor heterojunction thin-film transistors for enhanced electrical performance and stability

被引：0

作者：

Park, Sunghyun ^{[1
,2
]}

Park, Boyeon ^{[3
]}

Kim, Woojong ^{[3
]}

Yoo, Kunsang ^{[3
]}

Kim, Yong-Hoon ^{[3
]}

机构：

[1] Sungkyunkwan Univ, Dept Semicond & Display Engn, Suwon 16419, South Korea

[2] SamSung Display Co, Mobile Display Yield Enhancement, Asan 31454, South Korea

[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

oxide semiconductors; heterojunction channel; geometrical design; thin-film transistors; band bending; FIELD-EFFECT MOBILITY; GALLIUM-ZINC-OXIDE; CIRCUIT;

D O I：

10.35848/1882-0786/ad0654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the geometrical design of indium-zinc-tin-oxide/zinc-tin-oxide (IZTO/TZO) heterojunction thin-film transistors (TFTs) to achieve high electrical performance and stability. The coverage ratio of the IZTO front-channel-layer (FCL) in the channel region was varied to investigate its impact on electrical properties such as field-effect mobility and bias stability. We observed that with a 90% coverage ratio of IZTO FCL, the mobility increased from 15.9 cm2 Vs-1 to 20.4 cm2 Vs-1, with a suppressed threshold voltage (V th) shift. The IZTO/ZTO TFTs exhibited improved positive gate-bias stability showing a V th shift of +2.46 V. The band bending occurring at the heterointerface is attributed to the enhanced electrical performance.

引用

页数：6

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