An Electromechanical Compact Model for Radio Frequency Flexible Graphene Field-Effect Transistor

Modeling of radio frequency (RF) flexible electronic device is still a challenge due to lack of accurate model. In this paper, a compact model for RF flexible graphene field effect transistor (FGFET) is presented. The model is established by introducing first-principle calculation and tight-binding approach to calculate quantum capacitance and channel charge. After that, the model is established by drift-diffusion equation based on density of states (DOS) calculation and the nonlinear capacitance is deduced. Based on the compact model of quantum capacitance, and nonlinear capacitance, the extrinsic cutoff frequency (f(T)) and extrinsic maximum oscillation frequency (f(max)) are simulated. The results are validated by scattering (S) parameters measured up to 40 GHz. Moreover,within a maximum uniaxial strain of 2%, the simulated data show good agreement with the measured data of f(T) and f(max). The results of this paper will pave the way for RF applications of flexible electronics.