共 31 条
[1]
The 2018 GaN power electronics roadmap
[J].
Amano, H.
;
Baines, Y.
;
Beam, E.
;
Borga, Matteo
;
Bouchet, T.
;
Chalker, Paul R.
;
Charles, M.
;
Chen, Kevin J.
;
Chowdhury, Nadim
;
Chu, Rongming
;
De Santi, Carlo
;
De Souza, Maria Merlyne
;
Decoutere, Stefaan
;
Di Cioccio, L.
;
Eckardt, Bernd
;
Egawa, Takashi
;
Fay, P.
;
Freedsman, Joseph J.
;
Guido, L.
;
Haeberlen, Oliver
;
Haynes, Geoff
;
Heckel, Thomas
;
Hemakumara, Dilini
;
Houston, Peter
;
Hu, Jie
;
Hua, Mengyuan
;
Huang, Qingyun
;
Huang, Alex
;
Jiang, Sheng
;
Kawai, H.
;
Kinzer, Dan
;
Kuball, Martin
;
Kumar, Ashwani
;
Lee, Kean Boon
;
Li, Xu
;
Marcon, Denis
;
Maerz, Martin
;
McCarthy, R.
;
Meneghesso, Gaudenzio
;
Meneghini, Matteo
;
Morvan, E.
;
Nakajima, A.
;
Narayanan, E. M. S.
;
Oliver, Stephen
;
Palacios, Tomas
;
Piedra, Daniel
;
Plissonnier, M.
;
Reddy, R.
;
Sun, Min
;
Thayne, Iain
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
2018, 51 (16)

Amano, H.
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Baines, Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Grenoble Alpes, LETI, CEA, Grenoble, France Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Beam, E.
论文数: 0 引用数: 0
h-index: 0
机构:
Qorvo Inc, Richardson, TX USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Borga, Matteo
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Padua, Dept Informat Engn, Padua, Italy Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Bouchet, T.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Grenoble Alpes, LETI, CEA, Grenoble, France Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Chalker, Paul R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Liverpool, Sch Engn, Liverpool, Merseyside, England Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Charles, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Grenoble Alpes, LETI, CEA, Grenoble, France Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Chen, Kevin J.
论文数: 0 引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Hong Kong, Peoples R China Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Chowdhury, Nadim
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Chu, Rongming
论文数: 0 引用数: 0
h-index: 0
机构:
HRL Labs, Malibu, CA USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

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De Souza, Maria Merlyne
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Decoutere, Stefaan
论文数: 0 引用数: 0
h-index: 0
机构:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Di Cioccio, L.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Grenoble Alpes, LETI, CEA, Grenoble, France Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Eckardt, Bernd
论文数: 0 引用数: 0
h-index: 0
机构:
IISB, Fraunhofer Inst Integrated Syst & Device Technol, Schottkystr 10, D-91058 Erlangen, Germany Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

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Fay, P.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Freedsman, Joseph J.
论文数: 0 引用数: 0
h-index: 0
机构:
Nagoya Inst Technol, Res Ctr Nanodevices & Adv Mat, Nagoya, Aichi 4668555, Japan Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Guido, L.
论文数: 0 引用数: 0
h-index: 0
机构:
Virginia Tech, Dept Elect & Comp Engn, Mat Sci & Engn, Blacksburg, VA USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Haeberlen, Oliver
论文数: 0 引用数: 0
h-index: 0
机构:
Infineon Technol Austria AG, Siemensstr 2, A-9500 Villach, Austria Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Haynes, Geoff
论文数: 0 引用数: 0
h-index: 0
机构:
Inspirit Ventures Ltd, Blandford Forum, England Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Heckel, Thomas
论文数: 0 引用数: 0
h-index: 0
机构:
IISB, Fraunhofer Inst Integrated Syst & Device Technol, Schottkystr 10, D-91058 Erlangen, Germany Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Hemakumara, Dilini
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Glasgow, James Watt Nanofabricat Ctr, Glasgow, Lanark, Scotland Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Houston, Peter
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Hu, Jie
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Hua, Mengyuan
论文数: 0 引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Hong Kong, Peoples R China Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Huang, Qingyun
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Huang, Alex
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Jiang, Sheng
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Kawai, H.
论文数: 0 引用数: 0
h-index: 0
机构:
Powdec KK, 1-23-15 Wakagi Cho, Oyama City, Tochigi 3230028, Japan Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Kinzer, Dan
论文数: 0 引用数: 0
h-index: 0
机构:
Navitas Semicond, El Segundo, CA USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Kuball, Martin
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Bristol, Ctr Device Thermog & Reliabil, Bristol, Avon, England Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

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Lee, Kean Boon
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Li, Xu
论文数: 0 引用数: 0
h-index: 0
机构: Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Marcon, Denis
论文数: 0 引用数: 0
h-index: 0
机构:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

论文数: 引用数:
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McCarthy, R.
论文数: 0 引用数: 0
h-index: 0
机构:
MicroLink Devices Inc, Niles, IL USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Meneghesso, Gaudenzio
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Padua, Dept Informat Engn, Padua, Italy Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

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Nakajima, A.
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Narayanan, E. M. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Oliver, Stephen
论文数: 0 引用数: 0
h-index: 0
机构:
Navitas Semicond, El Segundo, CA USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Palacios, Tomas
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Piedra, Daniel
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Plissonnier, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Grenoble Alpes, LETI, CEA, Grenoble, France Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Reddy, R.
论文数: 0 引用数: 0
h-index: 0
机构:
MicroLink Devices Inc, Niles, IL USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Sun, Min
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan

Thayne, Iain
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Glasgow, James Watt Nanofabricat Ctr, Glasgow, Lanark, Scotland Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648601, Japan
[2]
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping
[J].
Canato, E.
;
Meneghini, M.
;
Nardo, A.
;
Masin, F.
;
Barbato, A.
;
Barbato, M.
;
Stockman, A.
;
Banerjee, A.
;
Moens, P.
;
Zanoni, E.
;
Meneghesso, G.
.
MICROELECTRONICS RELIABILITY,
2019, 100

Canato, E.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Padua, Dept Informat Engn, Padua, Italy Univ Padua, Dept Informat Engn, Padua, Italy

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Masin, F.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Padua, Dept Informat Engn, Padua, Italy Univ Padua, Dept Informat Engn, Padua, Italy

Barbato, A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Padua, Dept Informat Engn, Padua, Italy Univ Padua, Dept Informat Engn, Padua, Italy

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Banerjee, A.
论文数: 0 引用数: 0
h-index: 0
机构:
ON Semicond, Oudenaarde, Belgium Univ Padua, Dept Informat Engn, Padua, Italy

Moens, P.
论文数: 0 引用数: 0
h-index: 0
机构:
ON Semicond, Oudenaarde, Belgium Univ Padua, Dept Informat Engn, Padua, Italy

Zanoni, E.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Padua, Dept Informat Engn, Padua, Italy Univ Padua, Dept Informat Engn, Padua, Italy

Meneghesso, G.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Padua, Dept Informat Engn, Padua, Italy Univ Padua, Dept Informat Engn, Padua, Italy
[3]
OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs
[J].
Chen, Junting
;
Hua, Mengyuan
;
Wei, Jin
;
He, Jiabei
;
Wang, Chengcai
;
Zheng, Zheyang
;
Chen, Kevin J.
.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS,
2021, 9 (03)
:3686-3694

Chen, Junting
论文数: 0 引用数: 0
h-index: 0
机构:
Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Hua, Mengyuan
论文数: 0 引用数: 0
h-index: 0
机构:
Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Wei, Jin
论文数: 0 引用数: 0
h-index: 0
机构:
Peking Univ, Inst Microelect, Beijing 100871, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

He, Jiabei
论文数: 0 引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Wang, Chengcai
论文数: 0 引用数: 0
h-index: 0
机构:
Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Zheng, Zheyang
论文数: 0 引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Chen, Kevin J.
论文数: 0 引用数: 0
h-index: 0
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
[4]
Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress
[J].
Chen, Y. Q.
;
Feng, J. T.
;
Wang, J. L.
;
Xu, X. B.
;
He, Z. Y.
;
Li, G. Y.
;
Lei, D. Y.
;
Chen, Y.
;
Huang, Y.
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
2020, 67 (02)
:566-570

Chen, Y. Q.
论文数: 0 引用数: 0
h-index: 0
机构:
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China

Feng, J. T.
论文数: 0 引用数: 0
h-index: 0
机构:
South China Univ Technol, Guangzhou 510610, Peoples R China Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China

Wang, J. L.
论文数: 0 引用数: 0
h-index: 0
机构:
South China Univ Technol, Guangzhou 510610, Peoples R China Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China

Xu, X. B.
论文数: 0 引用数: 0
h-index: 0
机构:
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China

He, Z. Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China

Li, G. Y.
论文数: 0 引用数: 0
h-index: 0
机构:
South China Univ Technol, Guangzhou 510610, Peoples R China Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China

Lei, D. Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China

Chen, Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China

Huang, Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Peoples R China
[5]
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs
[J].
Cioni, Marcello
;
Zagni, Nicolo
;
Iucolano, Ferdinando
;
Moschetti, Maurizio
;
Verzellesi, Giovanni
;
Chini, Alessandro
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
2021, 68 (10)
:4862-4868

Cioni, Marcello
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy

Zagni, Nicolo
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy

Iucolano, Ferdinando
论文数: 0 引用数: 0
h-index: 0
机构:
STMicroelectronics, I-95121 Catania, Italy Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy

Moschetti, Maurizio
论文数: 0 引用数: 0
h-index: 0
机构:
STMicroelectronics, I-95121 Catania, Italy Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy

Verzellesi, Giovanni
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Modena & Reggio Emilia, Dept Sci & Methods Engn DISMI, I-42122 Reggio Emilia, Italy
Univ Modena & Reggio Emilia, EN&TECH Ctr, I-42122 Reggio Emilia, Italy Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy

Chini, Alessandro
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy
[6]
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p-GaN Gate HEMTs
[J].
He, Jiabei
;
Wei, Jin
;
Yang, Song
;
Wang, Yuru
;
Zhong, Kailun
;
Chen, Kevin J.
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
2019, 66 (08)
:3453-3458

He, Jiabei
论文数: 0 引用数: 0
h-index: 0
机构:
HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China
HKUST, Shenzhen Res Inst, Shenzhen 518000, Peoples R China HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China

Wei, Jin
论文数: 0 引用数: 0
h-index: 0
机构:
HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China
HKUST, Shenzhen Res Inst, Shenzhen 518000, Peoples R China HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China

Yang, Song
论文数: 0 引用数: 0
h-index: 0
机构:
HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China
HKUST, Shenzhen Res Inst, Shenzhen 518000, Peoples R China HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China

Wang, Yuru
论文数: 0 引用数: 0
h-index: 0
机构:
HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China
HKUST, Shenzhen Res Inst, Shenzhen 518000, Peoples R China HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China

Zhong, Kailun
论文数: 0 引用数: 0
h-index: 0
机构:
HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China
HKUST, Shenzhen Res Inst, Shenzhen 518000, Peoples R China HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China

Chen, Kevin J.
论文数: 0 引用数: 0
h-index: 0
机构:
HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China
HKUST, Shenzhen Res Inst, Shenzhen 518000, Peoples R China HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China
[7]
Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs
[J].
Jiang, Zuoheng
;
Hua, Mengyuan
;
Huang, Xinran
;
Li, Lingling
;
Wang, Chengcai
;
Chen, Junting
;
Chen, Kevin J.
.
IEEE TRANSACTIONS ON POWER ELECTRONICS,
2022, 37 (05)
:6018-6025

Jiang, Zuoheng
论文数: 0 引用数: 0
h-index: 0
机构:
Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Hua, Mengyuan
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Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Huang, Xinran
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Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Li, Lingling
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Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Wang, Chengcai
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Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Chen, Junting
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Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Chen, Kevin J.
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Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
[8]
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
[J].
Jones, Edward A.
;
Wang, Fei
;
Costinett, Daniel
.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS,
2016, 4 (03)
:707-719

Jones, Edward A.
论文数: 0 引用数: 0
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Univ Tennessee, Knoxville, TN 37996 USA Univ Tennessee, Knoxville, TN 37996 USA

Wang, Fei
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Univ Tennessee, Knoxville, TN 37996 USA Univ Tennessee, Knoxville, TN 37996 USA

Costinett, Daniel
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机构:
Univ Tennessee, Dept Elect Engn & Comp Sci, Knoxville, TN 37996 USA Univ Tennessee, Knoxville, TN 37996 USA
[9]
Kietzer G., 2012, ELECT OVERSTRESS ELE, P1
[10]
Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage
[J].
Kozak, Joseph P.
;
Song, Qihao
;
Zhang, Ruizhe
;
Ma, Yunwei
;
Liu, Jingcun
;
Li, Qiang
;
Saito, Wataru
;
Zhang, Yuhao
.
IEEE TRANSACTIONS ON POWER ELECTRONICS,
2023, 38 (01)
:435-446

Kozak, Joseph P.
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Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA

Song, Qihao
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Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA

Zhang, Ruizhe
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Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA

Ma, Yunwei
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Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA

Liu, Jingcun
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Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA

Li, Qiang
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Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA

Saito, Wataru
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Kyushu Univ, Res Inst Appl Mech, Fukuoka 8168580, Japan Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA

Zhang, Yuhao
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Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA