Band Modification and Localized Lattice Engineering Leads to High Thermoelectric Performance in Ge and Bi Codoped SnTe-AgBiTe2 Alloys

被引：23

作者：

Nie, Chang ^{[1
]}

Wang, Chong ^{[1
]}

Xu, Yongjie ^{[1
]}

Liu, Yuxin ^{[1
]}

Niu, Xiaojian ^{[1
]}

Li, Shuang ^{[1
]}

Gong, Yaru ^{[1
]}

Hou, Yunxiang ^{[1
]}

Zhang, Xuemei ^{[2
]}

Zhang, Dewei ^{[3
]}

Li, Di ^{[2
]}

Zhang, Yongsheng ^{[4
]}

Tang, Guodong ^{[1
]}

机构：

[1] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, MIIT Key Lab Adv Met & Intermet Mat Technol, Nanjing 210094, Peoples R China

[2] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

[3] Yancheng Inst Technol, Sch Mat Sci & Engn, Jiangsu 221051, Peoples R China

[4] Qufu Normal Univ, Adv Res Inst Multidisciplinary Sci, Qufu 273165, Shandong, Peoples R China

来源：

SMALL | 2023年 / 19卷 / 28期

基金：

中国国家自然科学基金;

关键词：

band convergence; localized lattice imperfections; SnTe; thermoelectric performances; THERMAL-CONDUCTIVITY; POLYCRYSTALLINE SNSE; SNTE; CONVERGENCE; EFFICIENCY; FIGURE; MERIT; POWER; HEAT; MG;

D O I：

10.1002/smll.202301298

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

SnTe, emerging as an environment-friendly alternative to conventional PbTe thermoelectrics, has drawn significant attention for clean energy conversion. Here, a high peak figure of merit (ZT) of 1.45 at 873 K in Ge/Bi codoped SnTe-AgBiTe2 alloys is reported. It is demonstrated that the existence of Ge, Bi, and Ag facilitate band convergence in SnTe, resulting in remarkable enhancement of Seebeck coefficient and power factor. Simultaneously, localized lattice imperfections including dislocations, point defects, and micro/nanopore structures are caused by incorporation of Ge, Bi, and Ag, which can effectively scatter heat carrying phonons with different wavelengths and contribute to an extremely low kappa(L) of 0.61 W m(-1) K-1 in Sn0.92Ge0.04Bi0.04Te-10%AgBiTe2. Such high peak ZT is achieved by decouples electron and phonon transport through band modification and localized lattice engineering, highlighting promising solutions for advancing thermoelectrics.

引用

页数：9

共 68 条

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