Performance of Schottky diode of structured FTO/TiO2/Al employing hydrogen fluoride treated TiO2: Qualitative and quantitative analysis

被引：1

作者：

Sk, Ramjan ^{[1
]}

Biswas, Animesh ^{[1
,2
]}

Layek, Animesh ^{[1
]}

Ray, Partha Pratim ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Phys, Kolkata 700032, India

[2] Sreegopal Banerjee Coll, Dept Phys, Mogra 712148, India

来源：

CHEMICAL PHYSICS | 2024年 / 580卷

关键词：

HF treatment; TiO2; nanoparticles; Schottky device; Mobility; Resistivity; Carrier concentration; TITANIUM-DIOXIDE; THIN-FILM; SURFACES;

D O I：

10.1016/j.chemphys.2024.112233

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Having ascertained the improvement of band gap and conductivity of the synthesized TiO2 after HF treatment under consideration, it occurred to us that the materials may perform as the better Schottky barrier diode. To verify our presumption, we studied the I-V characteristic of the device fabricated in a sandwich configuration of FTO/sample/Al. The comparative studies show better potentiality of the material in subject to study the qualitative and quantitative measures of the Schottky devices. The work is concluded by examined the various characteristic parameters related with performance of device that is fabricated with HF treated and untreated TiO2.

引用

收藏

页数：7

相关论文

共 32 条

[1] ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode [J].

Aydin, Sefa B. K. ;

Yildiz, Dilber E. ;

Cavus, Hatice Kanbur ;

Sahingoz, Recep .

BULLETIN OF MATERIALS SCIENCE, 2014, 37 (07) :1563-1568

[2] Synthesis of photocatalytic TiO2 nanoparticles:: optimization of the preparation conditions [J].

Bessekhouad, Y ;

Robert, D ;

Weber, JV .

JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, 2003, 157 (01) :47-53

[3] Electric-field and temperature dependence of the hole mobility in poly(p-phenylene vinylene) [J].

Blom, PWM ;

deJong, MJM ;

vanMunster, MG .

PHYSICAL REVIEW B, 1997, 55 (02) :R656-R659

[4] Gas-sensitive characteristics of metal/semiconductor polymer Schottky device [J].

Campos, M ;

Bulhoes, LOS ;

Lindino, CA .

SENSORS AND ACTUATORS A-PHYSICAL, 2000, 87 (1-2) :67-71

[5] On the negative capacitance behavior in the forward bias of Au/n-4H-SiC (MS) and comparison between MS and Au/TiO2/n-4H-SiC (MIS) type diodes both in dark and under 200 W illumination intensity [J].

Cetinkaya, H. G. ;

Yildiz, D. E. ;

Altindal, S. .

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2015, 29 (01)

[6] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].

CHEUNG, SK ;

CHEUNG, NW .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87

[7] Dye-sensitized solar cells with conversion efficiency of 11.1% [J].

Chiba, Yasuo ;

Islam, Ashraful ;

Watanabe, Yuki ;

Komiya, Ryoichi ;

Koide, Naoki ;

Han, Liyuan .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (24-28) :L638-L640

[8] One step hydrothermal synthesis of a rGO-TiO2 nanocomposite and its application on a Schottky diode: improvement in device performance and transport properties [J].

Das, Mrinmay ;

Datta, Joydeep ;

Dey, Arka ;

Jana, Rajkumar ;

Layek, Animesh ;

Middya, Somnath ;

Ray, Partha Pratim .

RSC ADVANCES, 2015, 5 (123) :101582-101592

[9] Application Possibility of Mn0.04Cu0.05Zn0.91O in Electronic and Magnetic Devices [J].

Datta, Joydeep ;

Dey, Arka ;

Neogi, Swarup K. ;

Das, Mrinmay ;

Middya, Somnath ;

Jana, Rajkumar ;

Bandyopadhyay, Sudipta ;

Layek, Animesh ;

Ray, Partha Pratim .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (11) :4724-4730

[10] Investigation of charge transport properties in less defective nanostructured ZnO based Schottky diode [J].

Dey, Arka ;

Layek, Animesh ;

Roychowdhury, Anirban ;

Das, Mrinmay ;

Datta, Joydeep ;

Middya, Somnath ;

Das, Dipankar ;

Ray, Partha Pratim .

RSC ADVANCES, 2015, 5 (46) :36560-36567

← 1 2 3 4 →