Stabilizing a SiGe BiCMOS Transmitter on a Molecular Absorption Line

被引：1

作者：

Gluck, Alexandra ^{[1
,2
]}

Rothbart, Nick ^{[1
]}

Hubers, Heinz-Wilhelm ^{[1
,2
]}

机构：

[1] German Aerosp Ctr DLR, Inst Opt Sensor Syst, D-12489 Berlin, Germany

[2] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany

来源：

2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ | 2023年

关键词：

D O I：

10.1109/IRMMW-THz57677.2023.10298875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In many applications, highly stable frequency references are desired which at the same time take up little volume and consume little power. Transmitters and receivers in SiGe BiCMOS technology can be realized on chip-scale, working at in the THz/Millimeter-wave range where many molecules have strong rotational transitions. We stabilized a SiGe BiCMOS transmitter on a rotational transition of carbon monoxide, reaching stabilities of <10(-10) at 100 s integration.

引用

页数：2

共 5 条

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