Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons

被引:3
作者
Rehman, A. [1 ]
Cywinski, G. [1 ]
Knap, W. [1 ]
Smulko, J. [2 ]
Balandin, A. A. [3 ]
Rumyantsev, S. [1 ]
机构
[1] CENTERA Labs, Inst High Pressure Phys, PL-01142 Warsaw, Poland
[2] Gdansk Univ Technol, Fac Elect Telecommun & Informat, Dept Metrol & Optoelect, Gdansk, Poland
[3] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA
基金
美国国家科学基金会;
关键词
1/F NOISE; TRICHALCOGENIDES; PHOTORESPONSE; ELECTRONICS; DENSITY; LAYER; TIS3;
D O I
10.1063/5.0143641
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the back-gated field-effect-transistor type with a normally off n-channel and an on-to-off ratio of up to four orders of magnitude. The current-voltage transfer characteristics revealed significant hysteresis owing to the presence of deep levels. The noise in ZrS3 nanoribbons had spectral density S-I similar to 1/f(gamma)(f is the frequency) with gamma = 1.3-1.4 within the whole range of the drain and gate bias voltages. We used light illumination to establish that the noise is due to generation-recombination, owing to the presence of deep levels, and deter-mined the energies of the defects that act as the carrier trapping centers in ZrS3 nanoribbons.
引用
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页数:5
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