The impact of the shape of zinc oxide nanoparticles on electrical parameters of natural dye-based FTO/Beetroot/Al Schottky diode

被引:0
作者
Das, Aloke Kumar [1 ]
Manik, N. B. [1 ]
Mandal, R. [2 ]
Mandal, D. K. [3 ]
机构
[1] Jadavpur Univ, Dept Phys, Kolkata 700032, India
[2] Jadavpur Univ, Sch Energy Studies, Kolkata 700032, India
[3] Jadavpur Univ, Dept Mech Engn, Kolkata 700032, India
关键词
STRUCTURAL-PROPERTIES; BACK ELECTRODE; TRAP ENERGY; ZNO; CONTACTS;
D O I
10.1007/s10854-023-11174-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this report, we have used cylindrical and spherical zinc oxide (ZnO) nanoparticles to fabricate FTO/ZnO/Al and herbal dye-based FTO/Beet + ZnO/Al Schottky diodes. Electrical parameters of the reported organic Schottky diode have been measured in different methods to analyse the effect of ZnO nano morphology on the device performance. These approaches were found to be remarkably consistent with one another. The calculated values of the FTO/Beetroot/Al series resistance (Rs), barrier height (n), trap energy (Ec), and ideality factor (n) are 1.77, 0.65 eV, 0.052 eV, and 589, respectively. These values change to 1.7, 0.62 eV, 0.048 eV, and 61, respectively, after the inclusion of cylindrical ZnO with beetroot dye. The values of n and Rs drop from 1.7 to 1.4 and 61 to 52 correspondingly when spherical ZnO nanoparticles are used in place of cylindrical ZnO. Again, reduction of trap energy of the reported organic Schottky diode is much higher in presence of Spherical ZnO than cylindrical ZnO. Series resistance (Rs), trap energy (Et), and barrier height (& phi;) have all decreased, respectively, by 91%, 11.5%, and 8%. Using spherical ZnO instead of cylindrical ZnO results in a 17% greater reduction in Rs. The disclosed devices' mobility and current conductivity are enhanced by this lowering. In this article, the used ZnO nanoparticles are not spherically perfect; if they were, this increase would be more apparent.
引用
收藏
页数:13
相关论文
共 57 条