High-power-density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers

被引：4

作者：

Kotani, Junji ^{[1
]}

Makiyama, Kozo ^{[1
,3
]}

Ohki, Toshihiro ^{[1
]}

Ozaki, Shiro ^{[1
]}

Okamoto, Naoya ^{[1
]}

Minoura, Yuichi ^{[1
]}

Sato, Masaru ^{[1
]}

Nakamura, Norikazu ^{[1
]}

Miyamoto, Yasuyuki ^{[2
]}

机构：

[1] Fujitsu Ltd, Adv Mat Project Devices & Mat Res Ctr, Atsugi, Kanagawa, Japan

[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo, Japan

[3] Sumitomo Elect Ind Ltd, Yokohama 2448588, Japan

来源：

ELECTRONICS LETTERS | 2023年 / 59卷 / 04期

关键词：

III-V semiconductors; power amplifiers; power HEMT;

D O I：

10.1049/ell2.12715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigated the back-barrier (BB) effect for gallium nitride (GaN)-based high-electron-mobility transistors with an Fe-doped buffer and Fe-buffer + Indium gallium nitride (InGaN)-BB structure. The authors found that the Fe-doped buffer + InGaN-BB structure was effective in reducing the off-state leakage current compared to the Fe-doped buffer. Secondary-ion-mass spectrometry measurements revealed that the segregated Fe existed with peaks at similar to 2 x 10(17) cm(-3) around the InGaN-BB layer. The authors believe that the negative charges which are generated by Fe effectively increased the BB effect as they exist just underneath the 2-dimensional-electron-gas channel and successfully achieved a high output power operation of 4.6 W/mm at 94 GHz.

引用

页数：3

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