p-type hexagonal boron nitride films with bis(cyclopentadienyl) magnesium as a doping gas in halide vapor phase epitaxy

被引：6

作者：

Liu, Xiaohang ^{[1
]}

Fan, Shengda ^{[1
]}

Chen, Xi ^{[2
]}

Liu, Jingrun ^{[1
]}

Zhao, Jihong ^{[1
]}

Liu, Xiuhuan ^{[3
]}

Hou, Lixin ^{[4
]}

Gao, Yanjun ^{[1
]}

Chen, Zhanguo ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[2] Changchun Univ Sci & Technol, Coll Sci, Jilin Key Lab Solid Laser Technol & Applicat, Changchun 130022, Peoples R China

[3] Jilin Univ, Coll Commun Engn, Changchun 130012, Peoples R China

[4] Jilin Agr Univ, Coll Informat Technol, Changchun 130118, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 20期

基金：

中国国家自然科学基金;

关键词：

LAYER;

D O I：

10.1063/5.0176165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an in situ carbon doping method for fabricating p-type hexagonal boron nitride thin films with a halide vapor phase epitaxy system by introducing bis(cyclopentadienyl) magnesium as a doping gas. The hBN films exhibited a growth rate of 3 mu m/h, while the doped hBN films showed a considerable reduction in resistivity by 8 orders of magnitude. Hall measurements demonstrated that the doped hBN films were p-type conductive. At room temperature, the doped hBN films exhibited a free hole concentration of similar to 10(15) cm(-3) and a resistivity of about 1000 Omega cm. X-ray photoelectron spectroscopy demonstrated the doping of carbon impurities into the hBN films and the formation of chemical bonds with B by mainly replacing nitrogen. Temperature-dependent I-V properties indicated that the ionization energy of the carbon impurities was about 320 meV.

引用

页数：6

共 27 条

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