Breaking Through the Trade-Off Between Wide Band Gap and Large SHG Coefficient in Mercury-Based Chalcogenides for IR Nonlinear Optical Application

被引:31
作者
Ran, Mao-Yin [1 ,2 ]
Zhou, Sheng-Hua [1 ,2 ]
Wei, Wen-Bo [1 ,2 ]
Li, Bing-Xuan [1 ,3 ]
Wu, Xin-Tao [1 ,3 ]
Lin, Hua [1 ,3 ]
Zhu, Qi-Long [1 ,3 ]
机构
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350002, Peoples R China
基金
中国国家自然科学基金;
关键词
diagonal synergetic substitution; infrared (IR) nonlinear optical materials; mercury-based chalcogenides; second-harmonic generation; structure-property relationship; 2ND-HARMONIC GENERATION; DESIGN; SN; GE;
D O I
10.1002/smll.202304563
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
It is substantially challenging for non-centrosymmetric (NCS) Hg-based chalcogenides for infrared nonlinear optical (IR-NLO) applications to realize wide band gap (E-g > 3.0 eV) and sufficient phase-matching (PM) second-harmonic-generation intensity (d(eff )> 1.0 x benchmark AgGaS2) simultaneously due to the inherent incompatibility. To address this issue, this work presents a diagonal synergetic substitution strategy for creating two new NCS quaternary Hg-based chalcogenides, AEHgGeS(4) (AE = Sr and Ba), based on the centrosymmetric (CS) AEIn(2)S(4). The derived AEHgGeS(4) displays excellent NLO properties such as a wide E-g (approximate to 3.04-3.07 eV), large PM d(eff) (approximate to 2.2-3.0 x AgGaS2), ultra-high laser-induced damage threshold (approximate to 14.8-15 x AgGaS2), and suitable Delta n (approximate to 0.19-0.24@2050 nm), making them highly promising candidates for IR-NLO applications. Importantly, such excellent second-order NLO properties are primarily attributed to the synergistic combination of tetrahedral [HgS4] and [GeS4] functional primitives, as supported by detailed theoretical calculations. This study reports the first two NCS Hg-based materials with well-balanced comprehensive properties (i.e., E-g > 3.0 eV and d(eff) > 1.0 x benchmark AgGaS2) and puts forward a new design avenue for the construction of more efficient IR-NLO candidates.
引用
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页数:8
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