Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing

被引：4
作者：
Cherkova, S. G. [1 ]
Volodin, V. A. [1 ,2 ]
Skuratov, V. A. [3 ,4 ,5 ]
Stoffel, M. [6 ]
Rinnert, H. [6 ]
Vergnat, M. [6 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Lavrentiev Ave 13, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Pirogova St 2, Novosibirsk 630090, Russia
[3] Joint Inst Nucl Res, Dubna 141980, Moscow Region, Russia
[4] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia
[5] Dubna State Univ, Dubna 141982, Moscow Region, Russia
[6] Univ Lorraine, CNRS, IJL, F-54000 Nancy, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2023年 / 535卷
关键词：
Swift heavy ions; Silicon; Photoluminescence; Defects in silicon; TRACK FORMATION; LUMINESCENCE; PHOTOLUMINESCENCE;
D O I：
10.1016/j.nimb.2022.12.004
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
High-resistivity floating-zone silicon (FZ-Si) and n-type (4.5 Ohm center dot cm) Czochralski silicon (CZ-Si) wafers were irradiated at room temperature with 167 MeV Xe ions to fluences ranging from 5.10(10) to 5.10(11) cm(-2). Temperature dependent photoluminescence (PL) measurements were performed to characterize the as-implanted and annealed silicon wafers. It was found that irradiation with swift heavy ions (SHI) leads to the formation of light-emitting defects in both types of silicon wafers. Low-temperature annealing (400 degrees C) leads to a significant increase of the photoluminescence intensity. In addition, the photoluminescence decreases for increasing measurement temperatures and eventually quenching is observed for temperatures larger than 80 K. The type of silicon wafer (FZ or CZ) does not significantly influence the defect-related light-emitting properties. This implies that low fluence SHI irradiation is a promising method for creation of light-emitting defects in silicon.
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收藏
页码：132 / 136
页数：5
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