Competition of Carrier Kinetics Contributes to Amplified Spontaneous Emission in Quasi-2D/3D (PBA)2MAn-1PbnBr3n+1 Thin Films under Strip Light Mode

被引：3

作者：

Lou, Xue ^{[1
]}

Yao, Lianfei ^{[1
]}

Zhang, Jiaqi ^{[4
]}

Sui, Ning ^{[1
]}

Wu, Min ^{[2
]}

Zhang, Wei ^{[5
,6
]}

Kang, Zhihui ^{[1
]}

Chi, Xiaochun ^{[1
]}

Zhou, Qiang ^{[3
]}

Zhang, Hanzhuang ^{[1
]}

Wang, Yinghui ^{[1
]}

机构：

[1] Jilin Univ, Coll Phys, Femtosecond Laser Lab, Key Lab Phys & Technol Adv Batteries, Changchun 130012, Peoples R China

[2] Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252000, Peoples R China

[3] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

[4] Jilin Univ, Coll Mat Sci & Engn, Key Lab Automobile Mat, Minist Educ, Changchun 130012, Peoples R China

[5] Guangzhou Univ, Sch Phys & Mat Sci, Guangzhou 510006, Peoples R China

[6] Guangzhou Univ, Res Ctr Adv Informat Mat CAIM, Huangpu Res & Grad Sch, Guangzhou 510006, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2023年 / 14卷 / 17期

基金：

中国国家自然科学基金;

关键词：

HALIDE PEROVSKITES; RECOMBINATION; DYNAMICS; EXCITON;

D O I：

10.1021/acs.jpclett.3c00490

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Quasi-2D halide perovskites have potential in lasing due to their amplified spontaneous emission (ASE) properties. The ASE of (PBA)(2)MA(n-1)Pb(n)Br(3n+1) thin films has been confirmed by photoluminescence (PL) testing using stripe light excitation (SLE). The ASE threshold decreases with decreasing environmental temperature (T-E) or increasing number of inorganic layers (n). Using the transient absorption technique, the Auger recombination and the cooling process of the high-activity carrier are accelerated with the decrease of n or TE. A new ASE mechanism is proposed where high-activity carriers directly emit photons under photon perturbation from adjacent sites, leading to the accumulation and amplification of emitted photons only in the SLE region for ASE to occur. In addition, the reduction of n promotes light scattering between nanothin layers, which supports a rapid increase in the ASE signal after the ASE threshold is crossed.

引用

页码：4050 / 4057

页数：8

共 37 条

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