Surface modification of sputtered NiOx hole transport layer for CH3NH3PbI3 perovskite solar cells

被引：9

作者：

Yanagida, Masatoshi ^{[1
]}

Nakamura, Tensho ^{[2
]}

Yoshida, Tsukasa ^{[2
]}

Khadka, Dhruba B. ^{[1
]}

Shirai, Yasuhiro ^{[1
]}

Miyano, Kenjiro ^{[1
]}

机构：

[1] Natl Inst Mat Sci NIMS, Res Ctr Energy & Environm Mat GREEN, 1 1 Namiki, Tsukuba 3050044, Japan

[2] Yamagata Univ, Grad Sch Sci & Engn, 4 3 16 Jonan, Yonezawa, Yamagata 9928510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2023年 / 62卷 / SK期

关键词：

perovskite; photovoltaics; solar cells; NiO; interface; EFFICIENCY;

D O I：

10.35848/1347-4065/acd5dc

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The modification of the sputtered NiOx (x & GE; 1)/CH3NH3PbI3 interface by 2-(3,6-dimethoxy-9H-carbazol-9-yl) ethyl] phosphonic acid (MeO-2PACz) considerably enhances the power conversion efficiency of perovskite solar cells whose structure is ITO/NiOx/CH3NH3PbI3/[6,6]-phenyl C-61 butyric acid methyl ester (PCBM)/aluminum-doped zinc oxide (AZO)/Ag. In devices without MeO-2PACz, the internal quantum efficiency (IQE) above 450 nm increases with the increase in NiOx thickness from 4 to 53 nm, although even in the thickest case, the IQE never reaches 90%. On the other hand, devices with MeO-2PACz modified NiOx show thickness-insensitive IQE of ca. 90%. We propose that (1) MeO-2PACz effectively fills the pinholes in thinner NiOx and (2) it passivates the carrier trapping/recombination defects at the NiOx/perovskite interface.

引用

页数：6

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