Advanced Morphological, Structural, and Optical Study of Pure and Doped Zinc Oxide Thin Films for Transparent Electronics Applications

被引:2
作者
Katoch, Apoorva [1 ]
Kaur, Navneet [1 ]
Shinde, Vandana [2 ]
Kaur, Raminder [1 ]
机构
[1] Punjabi Univ, Dept Phys, Patiala 147002, Punjab, India
[2] Kavayitri Bahinabai Chaudhari North Maharashtra Un, Dept Phys, Jalgaon 425001, India
关键词
Sol-gel; Vanadium doped zinc oxide; Fractal analysis; Rietveld refinement; Urbach energy; ZNO;
D O I
10.1007/s13538-023-01271-3
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Present work reports on the sol-gel synthesis of pure zinc oxide (ZnO) and 1% vanadium (V) doped zinc oxide (V:ZnO) thin films. Characterization of the fabricated thin films was carried out to study the structural, morphological, elemental, and optical properties. XRD analysis confirms strain is created due to V doping. Morphological results show that V:ZnO thin films are much smoother and homogeneous in comparison to that pure ZnO thin films. The doping of V ion in the ZnO crystal shows a decrease in Urbach energy, and CIE chromaticity results show that V:ZnO emits dark blue color. The statistical and fractal analysis reveals that 1% V doping enhances uniform and smooth texture. Overall results reveal that V:ZnO thin films have been used in transparent electronics and as blue LED.
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页数:9
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