The Effect of Temperature on a Single-Electron Transistor I-V Curve

被引：1

作者：

Papadopoulou, Panagiota ^{[1
]}

Ovaliadis, Kyriakos ^{[1
]}

Philippousi, Eleni ^{[1
]}

Hanias, Michael P. ^{[1
]}

Magafas, Lykourgos ^{[1
]}

Stavrinides, Stavros G. ^{[1
]}

机构：

[1] Int Hellenic Univ, Phys Dept, Kavala 65404, Greece

来源：

SYMMETRY-BASEL | 2024年 / 16卷 / 03期

关键词：

single-electron transistor; negative differential resistance; switching effect; ohmic behavior; COULOMB-BLOCKADE; SIMULATION; PHYSICS;

D O I：

10.3390/sym16030327

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In this paper, the effect of temperature on Single-Electron Transistor (SET) electrical behavior is investigated. In particular, a study of the current-voltage (I-V) curves according to parameter (temperature and gate voltage) variation is presented. Among others, the interesting phenomenon of the N-type negative differential resistance is reported as the temperature increases from absolute zero (0 K) to room temperature. Finally, theoretical analysis and simulation shows that the choice of the appropriate temperature and gate-voltage combination the SET I-V curves demonstrates either a negative differential resistance region, a switching effect, or a simple resistance behavior.

引用

页数：13

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