Impact of total ionizing dose on the alpha-soft error rate in FDSOI 28 nm SRAMs

被引：0

作者：

Moindjie, S. ^{[1
]}

Munteanu, D. ^{[1
]}

Autran, J. L. ^{[1
]}

Malherbe, V. ^{[2
]}

Gasiot, G. ^{[2
]}

Roche, P. ^{[2
]}

机构：

[1] Aix Marseille Univ, CNRS, UMR 7334, IM2NP, F-13397 Marseille 20, France

[2] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

来源：

MICROELECTRONICS RELIABILITY | 2023年 / 150卷

关键词：

Total ionizing dose; X-ray irradiation; Soft error rate; Synergy effects; Alpha particle; Single-event upset; Fully-depleted silicon-on-insulator; SRAM memory; Static noise margin; Critical charge; Modelling; Numerical simulation; SINGLE-EVENT UPSET; SENSITIVITY; DEPENDENCE;

D O I：

10.1016/j.microrel.2023.115181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Synergy effect of total ionizing dose (TID) on alpha-soft error rate (alpha-SER) in FDSOI 28 nm SRAM has been experimentally characterized using a dedicated setup combining alpha-particle irradiation (241Am solid source) in vacuum chamber and 10 keV X-ray irradiation. Measurements have been performed on a 3 Mbit single-port SRAM cut powered at 1 V. Irradiations up to 125 krad(Si) have been achieved and their impact on the alpha-SER has been characterized from the cumulated number of bitflips as a function of the exposition time to the alphasource. Modelling and simulation have been used to link transistor threshold voltage variations to SRAM cell stability in terms of static noise margin (SNM), critical charge (Qcrit) and finally estimated SER, in good agreement with experimental results.

引用

页数：7

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