Exploring thermally stable metal-oxide/SiO2 stack for metal oxide semiconductor memory and demonstration of pulse controlled linear response

被引：2
作者：
Asanuma, Shutaro [1 ]
Sumita, Kyoko [1 ]
Miyaguchi, Yusuke [2 ]
Horita, Kazumasa [2 ]
Masuda, Takeshi [2 ]
Jimbo, Takehito [2 ]
Miyata, Noriyuki [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] ULVAC Inc, Inst Adv Technol, 1220-1 Suyama, Susono 4101231, Japan
来源：
APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 06期
关键词：
interface dipole modulation; neuromorphic; synaptic; atomic layer deposition; metal oxide semiconductor memory; CRYSTALLIZATION;
D O I：
10.35848/1882-0786/acdd4e
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We fabricated Al2O3/SiO2 stack structures with atomically thin Ti oxide layers at the interfaces using atomic layer deposition and investigated the capacitance-voltage (C-V) hysteresis of the metal-oxide-semiconductor (MOS) capacitors. We studied the effect of post-deposition annealing in the temperature range of 150 & DEG;C-500 & DEG;C on the C-V hysteresis and found that the Al2O3/SiO2-based stacks are thermally stable compared to ZrO2/SiO2- and HfO2/SiO2-based stacks. Using Al2O3/SiO2-based stacks, we investigated the impact of oxide layer thickness and gate electrode materials and studied pulse-induced current changes in MOS field-effect transistors.
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页数：5
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共 33 条
  • [1] BEOL Compatible Superlattice FerroFET-based High Precision Analog Weight Cell with Superior Linearity and Symmetry
    Aabrar, Khandker Akif
    Gomez, Jorge
    Kirtania, Sharadindu Gopal
    San Jose, Matthew
    Luo, Yandong
    Ravikumar, Priyankka G.
    Ravindran, Prasanna Venkatesan
    Ye, Huacheng
    Banerjee, Sanjukta
    Dutta, Sourav
    Khan, Asif Islam
    Yu, Shimeng
    Datta, Suman
    [J]. 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2021,
  • [2] Agarwal S, 2016, IEEE IJCNN, P929, DOI 10.1109/IJCNN.2016.7727298
  • [3] A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing
    Ali, Tarek
    Mertens, Konstantin
    Kuehnel, Kati
    Rudolph, Matthias
    Oehler, Sebastian
    Lehninger, David
    Mueller, Franz
    Revello, Ricardo
    Hoffmann, Raik
    Zimmermann, Katrin
    Kaempfe, Thomas
    Czernohorsky, Malte
    Seidel, Konrad
    Van Houdt, Jan
    Eng, Lukas M.
    [J]. NANOTECHNOLOGY, 2021, 32 (42)
  • [4] Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
    Asanuma, Shutaro
    Sumita, Kyoko
    Miyaguchi, Yusuke
    Horita, Kazumasa
    Jimbo, Takehito
    Saito, Kazuya
    Miyata, Noriyuki
    [J]. AIP ADVANCES, 2020, 10 (08)
  • [5] Bez R, 2014, WOODH PUB SER ELECT, P1, DOI 10.1533/9780857098092.1
  • [6] Phase transitions in ferroelectric silicon doped hafnium oxide
    Boescke, T. S.
    Teichert, St.
    Braeuhaus, D.
    Mueller, J.
    Schroeder, U.
    Boettger, U.
    Mikolajick, T.
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (11)
  • [7] First principles study of the structural, electronic, and dielectric properties of amorphous HfO2
    Chen, Tsung-Ju
    Kuo, Chin-Lung
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
  • [8] Ferroelectric-based synapses and neurons for neuromorphic computing
    Covi, Erika
    Mulaosmanovic, Halid
    Max, Benjamin
    Slesazeck, Stefan
    Mikolajick, Thomas
    [J]. NEUROMORPHIC COMPUTING AND ENGINEERING, 2022, 2 (01):
  • [9] Vacancy and interstitial defects in hafnia
    Foster, AS
    Gejo, FL
    Shluger, AL
    Nieminen, RM
    [J]. PHYSICAL REVIEW B, 2002, 65 (17) : 1741171 - 17411713
  • [10] Structure and electrical levels of point defects in monoclinic zirconia
    Foster, AS
    Sulimov, VB
    Gejo, FL
    Shluger, AL
    Nieminen, RM
    [J]. PHYSICAL REVIEW B, 2001, 64 (22)
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