Atomic layer deposition and application of group IIInitrides semiconductor and their alloys

Group III nitride semiconductors, such as GaN, AlN, and InN, are an important class of compoundsemiconductor material, and have attracted much attention, because of their unique physicochemical properties.These semiconductors possess excellent characteristics, such as wide direct bandgap, high breakdown fieldstrength, high electron mobility, and good stability, and thus are called third-generation semiconductors. Theiralloy materials can adjust their bandgaps by changing the type or proportion of group III elements, covering awide wavelength range from near-ultraviolet to infrared, thereby achieving wavelength selectivity inoptoelectronic devices. Atomic layer deposition (ALD) is a unique technique that produces high-quality groupIII nitride films at low temperatures. The ALD has become an important method of preparing group III nitridesand their alloys. The alloy composition can be easily controlled by adjusting the ALD cycle ratio. This reviewhighlights recent work on the growth and application of group III nitride semiconductors and their alloys byusing ALD. The work is summarized according to similarities so as to make it easier to understand the progressand focus of related research. Firstly, this review summarizes binary nitrides with a focus on their mechanismand application. In the section on mechanism investigation, the review categorizes and summarizes the effects ofALD precursor material, substrate, temperature, ALD type, and other conditions on film quality. Thisdemonstrates the effects of different conditions on film growth behavior and quality. The section on applicationexploration primarily introduces the use of group III nitride films in various devices through ALD, analyzes theenhancing effects of group III nitrides on these devices, and explores the underlying mechanisms. Additionally,this section discusses the growth of group III nitride alloys through ALD, summarizing different depositionmethods and conditions. Regarding the ALD growth of group III nitride semiconductors, there is more researchon the ALD growth of AlN and GaN, and less research on InN and its alloys. Additionally, there is less researchon the ALD growth of GaN for applications, as it is still in the exploratory stage, while there is more researchon the ALD growth of AlN for applications. Finally, this review points out the prospects and challenges of ALDin preparation of group III nitride semiconductors and their alloys