Emerging trends in low band gap perovskite solar cells: materials, device architectures, and performance optimization

被引:6
作者
Ibrahim [1 ]
Shoukat, Amar [1 ]
Aslam, Fawad [1 ,4 ]
Rehman, M. Israr Ur [2 ,3 ]
机构
[1] Cent South Univ, Sch Phys, Changsha, Peoples R China
[2] Cent South Univ, Sch Math & Stat, Changsha, Peoples R China
[3] Cent South Univ, Sch Math & Stat, Changsha 410083, Hunan, Peoples R China
[4] Cent South Univ, Sch Phys, Changsha 410083, Hunan, Peoples R China
关键词
Perovskite solar cells; low bandgap; optoelectronic properties; photovoltaics; mixed-halide perovskites; ELECTRON-TRANSPORT LAYERS; PHOTOVOLTAIC PERFORMANCE; RECENT PROGRESS; EFFICIENT; STABILITY; CHALLENGES; COMMERCIALIZATION; FABRICATION; IMPROVEMENT; INTERFACE;
D O I
10.1080/00268976.2024.2316273
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This article delves into the domain of low bandgap perovskite solar cells, driven by the quest for enhanced device performance and expanded access to various solar energy spectra. The study systematically explores the materials, device design, and optimization strategies pertinent to low bandgap perovskite solar cells. The initial section focuses on the current status of low bandgap perovskite materials, scrutinizing approaches to enhance bandgap, stability, and charge transport. Novel materials such as mixed-halide perovskites, double perovskites, and perovskite quantum dots are examined to improve efficiency and broaden the spectral utilization. The investigation culminates in a comprehensive exploration of diverse device topologies aimed at enhancing the performance of low bandgap perovskite solar cells. This encompasses discussions on electron and hole transport materials, interfacial engineering techniques, various device designs, tandem configurations, and their respective merits and limitations. Additionally, the research scrutinizes methodologies to enhance the performance of low-bandgap perovskite solar cells, with a specific focus on light management, charge extraction, and mitigating recombination losses. The incorporation of passivation layers and interfacial modifications is discussed as a strategy for bolstering device stability and mitigating deterioration through interface engineering.
引用
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页数:27
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