Performance comparison of capping layer materials for double spin-torque magnetic tunnel junctions

被引：0

作者：

Aboud, Shela ^{[1
]}

Schneider, Julian ^{[2
]}

Luy, Jan-Niclas ^{[2
]}

Markussen, Troels ^{[2
]}

机构：

[1] Synopsys Inc, Mountain View, CA 94043 USA

[2] Synopsys Denmark, Copenhagen, Denmark

来源：

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年

关键词：

STT-MRAM; spin transfer torque; TMR; DFT; Machine-learned force fields; atomistic spin dynamics;

D O I：

10.23919/SISPAD57422.2023.10319512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a computational study of different capping layer materials in double spin-torque MTJ structures. Using fully atomistic calculations based on density functional theory, we calculate key parameters relevant for the read, write, and storage performance of STT-MRAM devices. Among the three candidate materials, Tungsten (W), Tantalum (Ta), and MgO, W is identified as best material for both thermal stability, STT, and TMR, but a very large Gilbert damping can be problematic for reducing the switching current.

引用

页码：353 / 356

页数：4

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