Enhanced energy storage performances under moderate electric field in aliovalent A/B-site co-doped AgNbO3

被引:16
作者
Shang, Min [1 ]
Ren, Pengrong [1 ]
Ren, Dong [1 ]
Wang, Xin [2 ]
Lu, Xu [1 ]
Yan, Fuxue [1 ]
Zhao, Gaoyang [1 ]
机构
[1] Xian Univ Technol, Shaanxi Prov Key Lab Elect Mat & Infiltrat Technol, Sch Mat Sci & Engn, Xian 710048, Peoples R China
[2] Xian Technol Univ, Sch Photoelect Engn, Lab Thin Film Tech & Opt Test, Xian 710032, Peoples R China
基金
中国国家自然科学基金;
关键词
AgNbO3; Antiferroelectric; Phase transition; Energy storage properties; FREE ANTIFERROELECTRIC CERAMICS; LEAD-FREE CERAMICS; EXCELLENT STABILITY; THERMAL-STABILITY; DENSITY; MICROSTRUCTURE; TRANSITIONS;
D O I
10.1016/j.materresbull.2022.112008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Energy storage properties of Nd3+ and Hf4+ A/B-site co-doped AgNbO3 (Ag1-2xNdxNb1-xHfxO3, x = 0.005-0.02) ceramics were investigated. The introduction of Nd(3+ )and Hf4+ stabilizes the antiferroelectric phase and en-hances the energy storage density. Besides, aliovalent doping of Nd(3+ )and Hf4+ increases the relaxor charac-teristic, leading to low energy storage loss in the polarization and high energy storage efficiency. Above the antipolar dipole freezing temperature (Tf), temperature-stable polarization is obtained, leading to a good tem-perature stability of energy storage properties. Ag(0.97)Nd(0.015)Nb(0.985)Hf(0.015)O(3 )exhibits excellent energy storage performances, with a recoverable energy storage density of 3.94 J/cm(3) and energy storage efficiency of 64.0% under a moderate electric field of 235 kV/cm. The energy storage density increases with the temperature, and the energy storage efficiency maintains good temperature stability, with a variance of 11% in the range of 25 ?C to 175 ?C under an applied electric field of 200 kV/cm.
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页数:10
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