Temperature dependence of ESD effects on 28 nm FD-SOI MOSFETs

被引：0

作者：

Xiao, Yiping ^{[1
,2
]}

Liu, Chaoming ^{[1
,2
]}

Zhang, Yanqing ^{[1
]}

Qi, Chunhua ^{[1
]}

Ma, Guoliang ^{[1
]}

Wang, Tianqi ^{[1
]}

Huo, Mingxue ^{[1
]}

机构：

[1] Harbin Inst Technol, Lab Space Environm & Phys Sci, Harbin 150006, Peoples R China

[2] Harbin Inst Technol, Sch Mat Sci & Technol, Harbin, Peoples R China

来源：

ENGINEERING REPORTS | 2024年 / 6卷 / 03期

基金：

中国国家自然科学基金;

关键词：

ambient temperatures; ESD effects; failure mechanisms; TCAD simulation; PROTECTION; DEVICES;

D O I：

10.1002/eng2.12729

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The failure mechanisms caused by electrostatic discharge (ESD) effects at ambient temperatures ranging from -75 to 125 & DEG;C are investigated by Silvaco TCAD simulator. The devices are NMOS transistors fabricated with 28 nm fully depleted silicon-on-insulator (FDSOI) technology. Results indicate that with an increase in temperature, the first breakdown voltage of the device decreased by 27.32%, while the holding voltage decreased by approximately 8.49%. The total current density, lattice temperature, potential, and so forth were extracted for a detailed insight into the failure process. These findings provide valuable references for the design and development of ESD protection devices applied at different temperature ranges.

引用

页数：9

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