Magnetic Second-Order Topological Insulators in 2H-Transition Metal Dichalcogenides

被引:20
作者
Liu, Guodong [1 ,2 ]
Jiang, Haoqian [1 ,2 ]
Guo, Zhenzhou [1 ,2 ]
Zhang, Xiaoming [1 ,2 ]
Jin, Lei [1 ,2 ]
Liu, Cong [1 ,2 ]
Liu, Ying [1 ,2 ]
机构
[1] Hebei Univ Technol, State Key Lab Reliabil & Intelligence Elect Equip, Tianjin 300130, Peoples R China
[2] Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China
基金
中国国家自然科学基金;
关键词
2D material; ferromagnetic; higher order topological insulator; TRANSITION; MOS2;
D O I
10.1002/advs.202301952
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The transition metal dichalcogenides, 2H-VX2 (X = S, Se, Te), are identified as two-dimensional second-order topological insulator (SOTI) with a ferromagnetic ground state by first-principles calculations. The 2H-VX2 (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is found and exhibit topologically protected corner states with spin-polarization. These corner states only accommodate the quantized fractional charge (e/3). And the charge is bound at the corners of the nanodisk geometry 2H-VX2 (X = S, Se, Te) in real space. The corner states are robust against symmetry-breaking perturbations, which makes them more easily detectable in experiments. Further, it is demonstrated that the SOTI properties of 2H-VX2 (X = S, Se, Te) materials can be maintained in the presence of spin-orbit coupling and are stable against magnetization. Overall, the results reveal 2H-VX2 (X = S, Se, Te) as an ideal platform for the exploration of magnetic SOTI and suggest its great potential in experimental detection.
引用
收藏
页数:7
相关论文
共 66 条
  • [1] Evidence for higher order topology in Bi and Bi0.92Sb0.08
    Aggarwal, Leena
    Zhu, Penghao
    Hughes, Taylor L.
    Madhavan, Vidya
    [J]. NATURE COMMUNICATIONS, 2021, 12 (01)
  • [2] Topological Insulator Materials
    Ando, Yoichi
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2013, 82 (10)
  • [3] BAND THEORY AND MOTT INSULATORS - HUBBARD-U INSTEAD OF STONER-I
    ANISIMOV, VI
    ZAANEN, J
    ANDERSEN, OK
    [J]. PHYSICAL REVIEW B, 1991, 44 (03): : 943 - 954
  • [4] Quantization of fractional corner charge in Cn-symmetric higher-order topological crystalline insulators
    Benalcazar, Wladimir A.
    Li, Tianhe
    Hughes, Taylor L.
    [J]. PHYSICAL REVIEW B, 2019, 99 (24)
  • [5] Electric multipole moments, topological multipole moment pumping, and chiral hinge states in crystalline insulators
    Benalcazar, Wladimir A.
    Bernevig, B. Andrei
    Hughes, Taylor L.
    [J]. PHYSICAL REVIEW B, 2017, 96 (24)
  • [6] Quantized electric multipole insulators
    Benalcazar, Wladimir A.
    Bernevig, B. Andrei
    Hughes, Taylor L.
    [J]. SCIENCE, 2017, 357 (6346) : 61 - 66
  • [7] Quantum spin Hall effect and topological phase transition in HgTe quantum wells
    Bernevig, B. Andrei
    Hughes, Taylor L.
    Zhang, Shou-Cheng
    [J]. SCIENCE, 2006, 314 (5806) : 1757 - 1761
  • [8] Quantum spin hall effect
    Bernevig, BA
    Zhang, SC
    [J]. PHYSICAL REVIEW LETTERS, 2006, 96 (10)
  • [9] IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS
    BLOCHL, PE
    JEPSEN, O
    ANDERSEN, OK
    [J]. PHYSICAL REVIEW B, 1994, 49 (23): : 16223 - 16233
  • [10] One-dimensional metallic edge states in MoS2 -: art. no. 196803
    Bollinger, MV
    Lauritsen, JV
    Jacobsen, KW
    Norskov, JK
    Helveg, S
    Besenbacher, F
    [J]. PHYSICAL REVIEW LETTERS, 2001, 87 (19) : 1 - 196803