Ultralow Thermal Conductivity and Improved Thermoelectric Properties of Al-Doped ZnO by In Situ O2 Plasma Treatment

被引:7
作者
Sethi, Vikesh [1 ]
Sun, Kai [1 ]
Newbrook, Daniel [1 ]
Runacres, Danielle [2 ]
Zhang, Tongjun [1 ]
Greenacre, Victoria [2 ]
de Groot, C. H. [1 ]
Huang, Ruomeng [1 ]
机构
[1] Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, England
[2] Univ Southampton, Sch Chem, Southampton SO17 1BJ, England
来源
SMALL STRUCTURES | 2023年 / 4卷 / 11期
基金
英国工程与自然科学研究理事会;
关键词
aluminum-doped zinc oxide (AZO); micro-thermoelectric generators; O-2 plasma treatment; thermal conductivity; thermoelectrics; ATOMIC LAYER DEPOSITION; AZO THIN-FILMS; TEMPERATURE; PERFORMANCE; PARAMETERS; TRANSPORT; FIGURE; ORIENTATION; GENERATOR; HYDROGEN;
D O I
10.1002/sstr.202300140
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The thriving of Internet-of-Things and integrated wireless sensor networks has brought an unprecedented demand for sustainable micro-Watt-scale power supplies. Development of high-performing micro-thermoelectric generator (& mu;-TEG) that can convert waste thermal energy into electricity and provide sustainable micro-Watt-scale power is therefore extremely timely and important. Herein, a significant advance in the development of earth-abundant, nontoxic thermoelectric materials of aluminum-doped zinc oxide (AZO) is presented. Through nanostructure engineering using a novel in situ O-2 plasma treatment, AZO films are demonstrated with ultralow thermal conductivity of 0.16 W m(-1) K-1 which is the lowest reported in the literature. This nanostructured film yields a power factor of 294 & mu;W m(-1) K-2 at 563 K and has resulted in a state-of-the-art ZT of 0.11 at room temperature and 0.72 at 563 K for AZO thin films. Furthermore, the fabrication and testing of a prototype lateral & mu;-TEG are reported based on the AZO thin film which achieves a power output of 1.08 nW with an applied temperature difference of 16.9 & DEG;C.
引用
收藏
页数:11
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