Interface Energy Alignment between Lead Halide Perovskite Single Crystals and TIPS-Pentacene

被引:4
作者
Garcia-Fernandez, Alberto [1 ]
Kammlander, Birgit [1 ]
Riva, Stefania [2 ]
Kuehn, Danilo [3 ]
Svanstrom, Sebastian [2 ]
Rensmo, Hakan [2 ]
Cappel, Ute B.
机构
[1] KTH Royal Inst Technol, Dept Chem, Div Appl Phys Chem, S-10044 Stockholm, Sweden
[2] Uppsala Univ, Dept Phys & Astron, Div Xray Photon Sci, S-75120 Uppsala, Sweden
[3] Helmholtz Zentrum Berlin Mat & Energie, Inst Methods & Instrumentat Synchrotron Radiat Re, D-12489 Berlin, Germany
基金
瑞典研究理事会;
关键词
MEAN FREE PATHS; FISSION; TRANSPORT; METAL; STATE; EDGE;
D O I
10.1021/acs.inorgchem.3c01482
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
At present, there is a huge development in optoelectronic applications using lead halide perovskites. Considering that device performance is largely governed by the transport of charges across interfaces and, therefore, the interfacial electronic structure, fundamental investigations of perovskite interfaces are highly necessary. In this study, we use high-resolution soft X-ray photoelectron spectroscopy based on synchrotron radiation to explore the interfacial energetics for the molecular layer of TIPS-pentacene and lead halide perovskite single crystals. We perform ultrahigh vacuum studies on multiple thicknesses of an in situ formed interface of TIPS-pentacene with four different in situ cleaved perovskite single crystals (MAPbI(3), MAPbBr(3), FAPbBr(3), and Cs(x)FA(1-x)PbBr(y)I(3-y)). Our findings reveal a substantial shift of the TIPS-pentacene energy levels toward higher binding energies with increasing thickness, while the perovskite energy levels remain largely unaffected regardless of their composition. These shifts can be interpreted as band bending in the TIPS-pentacene, and such effects should be considered when assessing the energy alignment at perovskite/organic transport material interfaces. Furthermore, we were able to follow a reorganization on the MAPbI3 surface with the transformation of the surface C 1s into bulk C 1s.
引用
收藏
页码:15412 / 15420
页数:9
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