Study of synthesis and characterization of triple ions modified bismuth ferrite for electronic devices: (Bi1/2Li1/2)(Fe1/3Mn1/3W1/3)O3

A high-temperature solid-state reaction technique was used to create a lead-free complex perovskite compound of a chemical composition (Bi1/2Li1/2)(Fe1/3Mn1/3W1/3)O3 (BLFMWO) The X-ray diffraction structural study reveals the monoclinic structure of the compound with cell parameters; a= 12.219 & ANGS;, b= 6.119 & ANGS;, c= 9.513 & ANGS; with & beta;=109.37 degrees. The detailed examination of the room-temperature scanning electron micrograph reveals a distinct microstructure with large and small grains. Extensive studies of the frequency and temperature dependence of capacitive (dielectric) and resistive (impedance and conductivity) behaviors over a wide tem-perature (25 degrees -500 degrees C) and frequency (1 kHz-1 MHz) range have revealed the dielectric dispersion, relaxation, and non-Debye type of conduction mechanism of the material. The ac conductivity study provides details regarding the conduction mechanism and semiconducting characteristics of the compound. The band gap energy of 3.62 eV emerges from the UV-visible spectrum, indicating that optoelectronic devices might utilize the material. FTIR spectra in the 500 cm -1- 4000 cm-1 range were used to investigate the bonding nature of the produced BLFMWO material. The specific capacitance of BLFMWO is 69.7524 F/g, having significant rate capabilities with pseudo -capacitive performance for super-capacitor applications. A low value of dielectric loss in high-frequency regions is applicable for application in microwave devices.