Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

被引:15
作者
Roccato, Nicola [1 ]
Piva, Francesco [1 ]
De Santi, Carlo [1 ]
Buffolo, Matteo [1 ]
Fregolent, Manuel [1 ]
Pilati, Marco [1 ]
Susilo, Norman [2 ]
Vidal, Daniel Hauer [2 ]
Muhin, Anton [2 ]
Sulmoni, Luca [2 ]
Wernicke, Tim [2 ]
Kneissl, Michael [2 ,3 ]
Meneghesso, Gaudenzio [1 ]
Zanoni, Enrico [1 ]
Meneghini, Matteo [1 ,4 ]
机构
[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-B, I-35131 Padua, Italy
[2] Tech Univ Berlin, Inst Solid State Phys, Hardenberstr 36, D-10623 Berlin, Germany
[3] Ferdidnand Braun Inst FBH, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
[4] Univ Padua, Dept Phys & Astron, Via Marzolo 8, I-35131 Padua, Italy
关键词
LIGHT-EMITTING-DIODES; RECOMBINATION; MECHANISM;
D O I
10.1063/5.0144721
中图分类号
O59 [应用物理学];
学科分类号
摘要
The long-term stability of ultraviolet (UV)-C light-emitting diodes (LEDs) is of major importance for many applications. To improve the understanding in this field, we analyzed the degradation of AlGaN-based UVC LEDs and modeled the variation of electrical characteristics by 2D simulations based on the results of deep-level optical spectroscopy (DLOS). The increase in the forward leakage current observed during ageing was ascribed an increase in trap-assisted tunneling. The analysis of the degradation kinetics suggests the role of a defect diffusion process, possibly involving impurities coming from the p-type layers.
引用
收藏
页数:7
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