Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

被引：19

作者：

Roccato, Nicola ^{[1
]}

Piva, Francesco ^{[1
]}

De Santi, Carlo ^{[1
]}

Buffolo, Matteo ^{[1
]}

Fregolent, Manuel ^{[1
]}

Pilati, Marco ^{[1
]}

Susilo, Norman ^{[2
]}

Vidal, Daniel Hauer ^{[2
]}

Muhin, Anton ^{[2
]}

Sulmoni, Luca ^{[2
]}

Wernicke, Tim ^{[2
]}

Kneissl, Michael ^{[2
,3
]}

Meneghesso, Gaudenzio ^{[1
]}

Zanoni, Enrico ^{[1
]}

Meneghini, Matteo ^{[1
,4
]}

机构：

[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-B, I-35131 Padua, Italy

[2] Tech Univ Berlin, Inst Solid State Phys, Hardenberstr 36, D-10623 Berlin, Germany

[3] Ferdidnand Braun Inst FBH, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

[4] Univ Padua, Dept Phys & Astron, Via Marzolo 8, I-35131 Padua, Italy

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 16期

关键词：

LIGHT-EMITTING-DIODES; RECOMBINATION; MECHANISM;

D O I：

10.1063/5.0144721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The long-term stability of ultraviolet (UV)-C light-emitting diodes (LEDs) is of major importance for many applications. To improve the understanding in this field, we analyzed the degradation of AlGaN-based UVC LEDs and modeled the variation of electrical characteristics by 2D simulations based on the results of deep-level optical spectroscopy (DLOS). The increase in the forward leakage current observed during ageing was ascribed an increase in trap-assisted tunneling. The analysis of the degradation kinetics suggests the role of a defect diffusion process, possibly involving impurities coming from the p-type layers.

引用

页数：7

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