Negative magnetoresistance in the antiferromagnetic semimetal V1/3TaS2

被引:1
作者
Wang, Zi [1 ]
Peng, Xin [1 ]
Zhang, Shengnan [2 ,3 ]
Su, Yahui [1 ]
Lai, Shaodong [1 ]
Zhou, Xuan [1 ]
Wu, Chunxiang [4 ]
Zhou, Tingyu [4 ]
Wang, Hangdong [5 ]
Yang, Jinhu [5 ]
Chen, Bin [5 ]
Zhai, Huifei [1 ]
Wu, Quansheng [2 ,3 ,6 ]
Du, Jianhua [1 ]
Jiao, Zhiwei [1 ]
Fang, Minghu [4 ,7 ]
机构
[1] China Jiliang Univ, Dept Phys, Hangzhou 310018, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[4] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
[5] Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Peoples R China
[6] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[7] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
基金
中国国家自然科学基金;
关键词
magnetoresistance; antiferromagnetic semimetal; band structure; FERROMAGNETISM;
D O I
10.1088/1674-1056/ad18aa
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Intercalated transition metal dichalcogenides (TMDCs) attract much attention due to their rich properties and potential applications. In this article, we grew successfully high-quality V(1/3)TaS(2 )crystals by a vapor transport method. We measured the magnetization, longitudinal resistivity rho(xx) (T, H), Hall resistivity rho(xy) (T, H), as well as performed calculations of the electronic band structure. It was found that V1/3TaS2 is an A-type antiferromagnet with the Neel temperature T- N = 6.20 K, and exhibits a negative magnetoresistance (MR) near T N. Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.
引用
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页数:5
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