Ultra-wide single crystal nanobelts of β-Ga2O3 synthesized by carbothermal reduction

Synthesized beta-Ga2O3 nanobelts have excellent electrical and optical properties. However, their widths are mostly limited to only a few microns or even tens of nanometers by far, which presents the big challenge for the fabrication of nanodevices and nanosensors. In this work, the beta-Ga2O3 single crystal nanobelts synthesized by carbothermal reduction have the ultra-large widths which can reach up to 145 mu m. Schottky barrier diode based on the nanobelt shows the impressive UV-induced rectifying characteristics due to ultra-low dark current of 100-200 fA at forward bias. At 5 V and 15 V, its ratios of current under 254 nm UV condition and that under dark condition are as high as 5 x 10(5) and 1.4 x 10(6), respectively. Meanwhile, the diode also has the high breakdown voltage of 240 V.