High-temperature tolerant TaOX/HfO2 self-rectifying memristor array with robust retention and ultra-low switching energy

Due to the heat generation during operations in high-density three-dimensional (3D) integrated chips, a high-temperature tolerant and high-performance self-rectifying memristor (SRM) is a promising candidate for 3D integration. Here, we investigated the high-temperature characteristics of Ta/TaOX/HfO2/Pt SRMs with a 250 nm feature size in an 8 x 8 crossbar array (CBA). The SRMs exhibit high uniformity and can be operated repeatedly at Set (4 V/2 mu s) and Reset (-2 V/1 mu s) pulses for more than 10(4) cycles resulting in ultra-low switching energy (5.86 aJ for Set and 77.2 aJ for Reset). High yield of the array indicates the reliable preparation processes. Remarkably, the CBA is capable of stably resistive switching at high temperatures from 300 to 475 K. At 300 K, the SRM shows large nonlinearity (NL, similar to 1.4 x 10(4)) and rectification ratio (RR, similar to 8.8 x 10(3)) as well as high scalability (330 Mbit); at 475 K, the NL and RR of the SRM can still maintain above 400, and the scalability still reaches 71 Kbit. Moreover, our SRM passed a high-temperature retention test of over 5 x 10(4) s at 438 K. Segmented fittings of the I-V curves of the SRM at different temperatures were performed, concluding that large NL and RR attributed to the Schottky barriers at TaOX/HfO2 and Pt/HfO2 interfaces, respectively. Our work furnishes a feasible solution for high-density 3D integrated memristors in high-temperature application scenarios represented by automotive-grade chips.