Wafer-Scale Fabrication of Al/MoS2/Poly-Si Memristors and Insight of Mechanism on the Resistive Switching

Resistive switching properties in 2D materials have attracted enormous research attention. However, structures using a transfer process and noble metals are still far from practical applications. An ultrathin memristor with Al/MoS2/poly-Si structure has been demonstrated featuring highly Si-compatible and full-wafer processes. The fabricated devices showed a high ON/OFF resistive switching (RS) ratio of 1 x 10(4), endurance cycles greater than 1 x 10(3), and retention exceeding >= 10(4) s. Systematical electrical characterizations at various temperatures were performed to investigate the detailed RS and conduction mechanisms. The diffusion of sulfur ions/vacancies occurring between the metal electrode and the MoS2 multilayer film accounted for the major RS properties. Trap-assisted tunneling appeared to dominate the high resistance state (HRS). For the low resistance state (LRS), Schottky emission/Ohmic-behavior dominated at low/high temperature regimes. The grain boundaries in the polycrystalline MoS2 film and interfacial layer appeared to be the key to filament formation and annihilation as well as the transport mechanism. This work presents a promising MoS2-based memristor structure and a comprehensive understanding of the operation mechanism, which is favorable for the next generation of memory devices in pursuit of ultrahigh density in wafer-scale.