2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension

被引：74

作者：

Wang, Boyan ^{[1
]}

Xiao, Ming ^{[1
]}

Spencer, Joseph ^{[1
,3
]}

Qin, Yuan ^{[1
]}

Sasaki, Kohei ^{[2
]}

Tadjer, Marko J. ^{[3
]}

Zhang, Yuhao ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24060 USA

[2] Novel Crystal Technol Inc, Sayama 3501328, Japan

[3] Naval Res Lab, Washington, DC 20375 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 02期

基金：

美国国家科学基金会;

关键词：

Gallium; Capacitance; Sputtering; Schottky diodes; Capacitance-voltage characteristics; Power electronics; Fabrication; ultra-wide bandgap; gallium oxide; junction termination extension; nickel oxide; breakdown voltage; on-resistance; capacitance; FIGURE-OF-MERIT; BARRIER DIODES; BALIGAS FIGURE; HETEROJUNCTION DIODES; THERMAL-RESISTANCE;

D O I：

10.1109/LED.2022.3229222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work demonstrates vertical Ga2O3 Schot-tky barrier diodes (SBDs) with a novel junction termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide (NiO). The NiO layers have the varied lengths to enable a graded decrease in effective charge density away from the main junction. The fabrication of this JTE obviates the etch or implantation and shows good throughput. The fabricated Ga2O3 SBDs exhibit a forward voltage below 1.9 V at the current density of 100 A/cm2, a differential specific on-resistance of 5.9 m(2). cm(2), and a breakdown voltage over 2.5 kV. The Baliga's figure of merit (FOM) exceeds 1 GW/cm(2 )and is among the highest in multi-kilovolt Ga2O3 SBDs. Besides, the capacitance of the JTE region is extracted, allowing for evaluation of the capacitance, charge, and switching FOM of 1.7 kV-class Ga2O3 SBDs with varied current ratings. The results show good promise of Ga2O3 SBDs for kilovolt power electronics.

引用

页码：221 / 224

页数：4

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