ON THE PROPERTIES OF THE Si-SiO2 TRANSITION LAYER IN MULTILAYER SILICON STRUCTURES

被引：2

作者：

Daliev, Shakhrukh Kh. ^{[1
]}

Saparov, Fayzulla A. ^{[1
]}

机构：

[1] Natl Univ Uzbekistan, Inst Semicond Phys & Microelect, 20 Yangi Almazar St, Tashkent 100057, Uzbekistan

来源：

EAST EUROPEAN JOURNAL OF PHYSICS | 2023年 / 04期

关键词：

MDS structure; Silicon; Transition layer; Interface; Temperature; Dielectric layer;

D O I：

10.26565/2312-4334-2023-4-25

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Capacitance spectroscopy was used to study the capacitive-voltage characteristics of multilayer structures with a Si-SiO2 transition layer in Al-SiO2-n-Si type samples fabricated by the thermal oxidation of a semiconductor. It is shown that the inhomogeneous distribution of the density of surface states is a localized electroactive center at the very semiconductor-dielectric interface, due to overbarrier charge emission or thermal ionization of impurity centers.

引用

页码：206 / 209

页数：4

共 20 条

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