An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model

被引：3

作者：

Singhal, Anant ^{[1
]}

Gill, Garima ^{[1
]}

Pahwa, Girish ^{[2
]}

Hu, Chenming ^{[2
]}

Agarwal, Harshit ^{[1
]}

机构：

[1] Indian Inst Technol Jodhpur, Nano Devices & App Lab, Jodhpur, Rajasthan, India

[2] Univ Calif Berkeley, Berkeley, CA 94720 USA

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

BSIM-BULK; Gummel Symmetry test; Harmonic Balance test; LDMOS; MOSFET MODEL; DEVICES; PSP;

D O I：

10.1109/EDTM55494.2023.10103122

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Symmetry, continuity, differentiability, accuracy and efficiency are the essential requirements of a compact model. To ensure this need, in this work, we implement two major updates in drift resistance model in BSIM-High Voltage (HV) compact model. The updated model is faster while ensuring infinite continuity and differentiability around V-ds = 0V, leading to correct slope of harmonics. The model is validated with the numerical simulated and experimental data of HV transistors.

引用

页数：3

共 34 条

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