Investigation of optoelectronic properties of half-Heusler KZnN and KZnP compounds

被引:6
作者
Azzi, S. [1 ,2 ]
Belkharroubi, F. [3 ,4 ]
Ramdani, N. [1 ]
Ameri, M. [3 ]
Messaoudi, I. S. [1 ,5 ]
Belkilali, W. [6 ,7 ]
Drici, L. [3 ]
Blaha, L. [6 ]
Ameri, I. [3 ]
Al-Douri, Y. [8 ,9 ,10 ]
Bouhemadou, A. [11 ]
机构
[1] Univ Sci & Technol Oran Mohamed Boudiaf, Dept Genie Phys, LPMF, Oran, Algeria
[2] Ecole Super Sci Biol Oran ESSBO, BP 1042, Oran 31003, Algeria
[3] Univ Djillali Liabes Sidi Bel Abbes, Lab Phys Chem Adv Mat, BP 89, Sidi Bel Abbes 22000, Algeria
[4] Univ Sci & Technol USTO MB, Fac Phys, Genius Phys Dept, Oran 31000, Algeria
[5] Belhadj Bouchaib Univ Ctr, Ain Temouchent, Algeria
[6] Univ Ahmed Zabana, Phys Dept, Relizane 48000, Algeria
[7] Univ Djillali Liabes Sidi Bel Abbes, Fac Technol, Applicat Plasma Electrostat & Electromagnet Compat, SidiBel Abbes, Algeria
[8] Univ Sharjah, Coll Sci, Dept Appl Phys & Astron, POB 27272, Sharjah, U Arab Emirates
[9] Piri Reis Univ, Fac Engn, Dept Mech Engn, EflatunSk 8, TR-34940 Istanbul, Turkiye
[10] Univ Malaya, Nanotechnol & Catalysis Res Ctr, Kuala Lumpur 50603, Malaysia
[11] Univ Ferhat Abbas Setif 1, Fac Sci, Dept Phys, Lab Developing New Mat & their Characterizat, Setif 19000, Algeria
关键词
Half-Heusler; KZnN; KZnP; mechanical; optical; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; AB-INITIO; 1ST-PRINCIPLES; BEHAVIOR; ALLOYS;
D O I
10.31349/RevMexFis.69.060501
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This is to investigate the structural, mechanical, electronic and optical properties of half-Heusler KZnN and KZnP compounds. The ab initio method based on density functional theory is employed. The study of structural properties has allowed us to verify the cubic structure type I that is the most stable among the three possible atomic arrangements for the two half-Heusler compounds. The mechanical stability is checked, since the calculated elastic constants obey the stability criteria of cubic. Our calculations have demonstrated that KZnN is a ductile material that is considerably stiffer than KZnP, which exhibits brittleness. The obtained results for the electronic properties with mBJ-GGA approximation reveal a semiconductor behavior with a band gap along Gamma as estimated at 0.3 eV and 0.9 eV for KZnN and KZnP compounds, respectively. In addition, the optical properties have been studied by analyzing the variation of different parameters such as dielectric function, refractive index, reflectivity, absorption coefficient and conductance as a function of photon's energy for a wide range; 0 40 eV. The origin of peaks in the optical spectra is determined in terms of calculated energy band structures. This work has predicted strong absorption in the ultraviolet field.
引用
收藏
页数:15
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