High-efficiency electromagnetic interference shielding and thermal management of high-graphene nanoplate-loaded composites enabled by polymer-infiltrated technique

被引:69
作者
Li, Yi-Ke [1 ]
Li, Wen-Jing [2 ]
Wang, Zhi-Xing [2 ]
Du, Pei-Yao [2 ]
Xu, Ling [3 ]
Jia, Li-Chuan [2 ]
Yan, Ding-Xiang [3 ]
机构
[1] Sichuan Univ, Coll Polymer Sci & Engn, State Key Lab Polymer Mat Engn, Chengdu 610065, Peoples R China
[2] Sichuan Univ, Coll Elect Engn, Chengdu 610065, Peoples R China
[3] Sichuan Univ, Sch Aeronaut & Astronaut, Chengdu 610065, Peoples R China
基金
中国国家自然科学基金;
关键词
Graphene nanoplates; High filler loads; Polymer-infiltrated technique; EMI shielding; Thermal management; PERFORMANCE; CONDUCTIVITY;
D O I
10.1016/j.carbon.2023.118096
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Polymer composites embedded with high filler loads (>= 50 wt%) are urgently needed to address the electro-magnetic interference (EMI) shielding and thermal barrier problems for the high-power integrated electronic devices. However, designing polymer composites with high filler loads remains a challenge due to difficulties in processability and poor flexibility. Herein, high graphene nanoplates-loaded polyurethane (GNP/PU) composites were enabled by a tractable and scalable polymer-infiltrated technique, in which GNPs were in compact contact face to face and arranged along the in-plane direction. The formation of such structure provided good channels for the transmission of electrons and phonons in the GNP/PU composites. Impressively, the GNP/PU composites showed strong EMI shielding and thermal conductivity, with a superior EMI shielding effectiveness of 67.6 dB (0.4 mm thickness), and extremely high thermal conductivity of 41.60 W/(m.K). Moreover, the GNP/PU com-posites were proven to have excellent mechanical flexibility, EMI shielding stability, and thermal management capability. With good comprehensive performance and high processability, the GNP/PU composites hold great promise for EMI shielding and thermal management applications in the field of highly integrated electronics.
引用
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页数:8
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