High-performance perovskite/silicon heterojunction solar cells enabled by industrially compatible postannealing

被引:6
作者
Wang, Guangyi [1 ]
Yue, Zongyi [1 ]
Huang, Zengguang [1 ]
Liu, Wenzhu [2 ]
Tong, Rui [3 ]
Yin, Haipeng [3 ]
Yang, Lifei [4 ]
Yu, Fucheng [1 ]
Zhang, Yuanyuan [1 ]
Sun, Zongyang [5 ]
Zhong, Sihua [1 ]
机构
[1] Jiangsu Ocean Univ, Sch Sci, Lianyungang 222005, Jiangsu, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai, Peoples R China
[3] JA Solar, Yangzhou, Peoples R China
[4] SuZhou GH New Energy Tech Co Ltd, Suzhou, Peoples R China
[5] Jinghaiyang Semicond Mat Co Ltd, Lianyungang, Peoples R China
来源
PROGRESS IN PHOTOVOLTAICS | 2023年 / 31卷 / 09期
基金
中国国家自然科学基金;
关键词
carrier selective contacts; dopant free contacts; perovskite; silicon heterojunction solar cells; thermal stability; ELECTRON-SELECTIVE CONTACTS; PASSIVATING CONTACTS; DOPANT-FREE;
D O I
10.1002/pip.3696
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In recent years, developing dopant-free carrier-selective contacts, instead of heavily doped Si layer (either externally or internally), for crystalline silicon (c-Si) solar cells have attracted considerable interests with the aim to reduce parasitic light absorption and fabrication cost. However, the stability still remains a big challenge for dopant-free contacts, especially when thermal treatment is involved, which limits their industrial adoption. In this study, a perovskite material ZnTiO3 combining with an ultrathin (similar to 1 nm) SiO2 film and Al layer is used as an electron-selective contact, forming an isotype heterojunction with n-type c-Si. The perovskite/c-Si heterojunction solar cells exhibit a performance-enhanced effect by postmetallization annealing when the annealing temperature is 200-350 degrees C. Thanks to the postannealing treatment, an impressive efficiency of 22.0% has been demonstrated, which is 3.5% in absolute value higher than that of the as-fabricated solar cell. A detailed material and device characterization reveal that postannealing leads to the diffusion of Al into ZnTiO3 film, thus doping the film and reducing its work function. Besides, the coverage of SiO2 is also improved. Both these two factors contribute to the enhanced passivation effect and electron selectivity of the ZnTiO3-based contact and hence improve the cell performance.
引用
收藏
页码:921 / 930
页数:10
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