Numerical prediction on the photovoltaic performance of CZTS-based thin film solar cell

被引:16
作者
Abir, Ahnaf Tahmid [1 ]
Joy, Arifuzzaman [1 ]
Mondal, Bipanko Kumar [1 ,2 ]
Hossain, Jaker [1 ]
机构
[1] Univ Rajshahi, Solar Energy Lab, Dept Elect & Elect Engn, Rajshahi, Bangladesh
[2] Pundra Univ Sci & Technol, Dept Elect & Elect Engn, Bogura, Bangladesh
来源
NANO SELECT | 2023年 / 4卷 / 01期
关键词
CZTS; dual-heterojunction; high efficiency; WSe2; ZnS; BUFFER LAYER; RENEWABLE ENERGY; EFFICIENCY; PARAMETERS; CONTACT; SULFIDE;
D O I
10.1002/nano.202200228
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This article presents an enormously effective Cu2ZnSnS4 (CZTS)-based n-ZnS/p-CZTS/p(+)-WSe2 thin film solar cell. The device has been studied by varying the thickness, doping concentration and defect density of each layer utilizing SCAPS-1D simulation software. The power conversion efficiency (PCE) for n-ZnS/p-CZTS single heterojunction is 14.06% with the J(SC) = 20.26 mA cm(-2), V-OC = 0.88 V and FF = 78.59%, respectively. This PCE is elevated to 27.31% with the J(SC) = 33.72 mA cm(-2), V-OC = 0.97 V and FF = 83.75%, respectively due to insertion of WSe2 back surface field (BSF) layer in the same structure. The significant improvement of PCE mainly depends on short circuit current which is resulted due to WSe2 layer that absorbs sub-band gap photons through tail-states-assisted (TSA) photon upconversion method. These entire results demonstrate the potential of WSe2 as BSF layer in CZTS-based thin film solar cells.
引用
收藏
页码:112 / 122
页数:11
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