Picosecond laser-induced evolution of processing properties of 4H-SiC

被引:5
作者
Liu, Haixu [1 ]
Jin, Mengmeng [1 ]
Li, Jiejing [1 ]
Li, Zhipeng [1 ]
Zuo, Dunwen [1 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Coll Mech & Elect Engn, Nanjing 210016, Peoples R China
基金
中国国家自然科学基金;
关键词
Laser irradiation; Surface topography; Microgroove dimensions; Mechanical properties; SIC SURFACE; ABLATION; CARBIDE;
D O I
10.1016/j.optmat.2023.114569
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The irradiation threshold of 4H-SiC under picosecond laser action was calculated, and the influence of laser parameters on the size of 4H-SiC was studied. According to the model, the evolution rule of the microgroove size was predicted. The effect of laser parameters on the mechanical properties of 4H-SiC was studied by nanoindentation. The results show that the ablation threshold energy density of the picosecond laser on 4H-SiC is 2.67 J/cm(2). The effect regular of laser parameters on the size of 4H-SiC microgrooves: energy density > scanning speed > scanning interval. The error of the microgroove which is between the predicted value and measurements is within 10 %. By doing nanoindentation detection, proving that Pop-in is the elastic-plastic transition point. It shows that laser irradiation has a significant modification effect on the mechanical properties of 4H-SiC. According to the difference range of elastic modulus and hardness, showing that the influence of laser energy density on mechanical properties is dominant. The consequences of the study provide a theoretical foundation for subsequent CMP processing.
引用
收藏
页数:9
相关论文
共 24 条
[1]   One-step fabrication of fine surfaces via femtosecond laser on sliced SiC [J].
Chen, Gaopan ;
Li, Jianguo ;
Luo, Haimei ;
Zhou, Yan ;
Peng, Qingfa ;
Xie, Xiaozhu ;
Pan, Guoshun .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 132
[2]   Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face [J].
Chen, Gaopan ;
Li, Jianguo ;
Long, Jiangyou ;
Luo, Haimei ;
Zhou, Yan ;
Xie, Xiaozhu ;
Pan, Guoshun .
APPLIED SURFACE SCIENCE, 2021, 536
[3]   Investigation on the ablation behavior of cemented tungsten carbide by a nanosecond UV laser [J].
Chu, Chenglong ;
Zhang, Quanli ;
Zhuo, Hangyu ;
Zhang, Zhen ;
Zhu, Yandan ;
Fu, Yucan .
JOURNAL OF MANUFACTURING PROCESSES, 2021, 71 :461-471
[4]   Preparation and polishing properties of water-based magnetorheological chemical finishing fluid with high catalytic activity for single-crystal SiC [J].
Deng, Jiayun ;
Lu, Jiabin ;
Yan, Qiusheng ;
Zhang, Qixiang ;
Pan, Jisheng .
JOURNAL OF INTELLIGENT MATERIAL SYSTEMS AND STRUCTURES, 2021, 32 (13) :1441-1451
[5]   An investigation of recast behavior in laser ablation of 4H-silicon carbide wafer [J].
Feng, Shaochuan ;
Zhang, Ru ;
Huang, Chuanzhen ;
Wang, Jun ;
Jia, Zhixin ;
Wang, Jin .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 105
[6]   Incipient plasticity in 4H-SiC during quasistatic nanoindentation [J].
Goel, Saurav ;
Yan, Jiwang ;
Luo, Xichun ;
Agrawal, Anupam .
JOURNAL OF THE MECHANICAL BEHAVIOR OF BIOMEDICAL MATERIALS, 2014, 34 :330-337
[7]   Influence of SiC surface defects on materials removal in atmospheric pressure plasma polishing [J].
Jia, Guanglu ;
Li, Bing ;
Zhang, Jufan .
COMPUTATIONAL MATERIALS SCIENCE, 2018, 146 :26-35
[8]  
Jovanović A, 2019, Mobility and Vehicle Mechanics, V45, P1, DOI [10.24874/mvm.2019.45.03.01, 10.24874/mvm.2019.45.03.01, DOI 10.24874/MVM.2019.45.03.01]
[9]   Progressive formation of fine and coarse ripples on SiC surface by repeated irradiation of femtosecond laser pulses [J].
Kim, S. H. ;
Byun, K. H. ;
Sohn, I. B. ;
Jeong, S. H. .
APPLIED PHYSICS B-LASERS AND OPTICS, 2013, 113 (03) :395-402
[10]   Thermal diffusivity and thermal conductivity of SiC composite tubes: the effects of microstructure and irradiation [J].
Koyanagi, Takaaki ;
Wang, Hsin ;
Mena, Jose' D. Arregui ;
Petrie, Christian M. ;
Deck, Christian P. ;
Kim, Weon-Ju ;
Kim, Daejong ;
Sauder, Cedric ;
Braun, James ;
Katoh, Yutai .
JOURNAL OF NUCLEAR MATERIALS, 2021, 557