Atomic Layer Deposition of Perpendicularly Magnetized Co Layers Showing Current-Induced Domain Wall Motion

被引：2

作者：

Kado, Masaki ^{[1
]}

Tokuda, Yoshinori ^{[1
]}

Ootera, Yasuaki ^{[1
]}

Umetsu, Nobuyuki ^{[1
]}

Quinsat, Michael ^{[1
]}

Fukumizu, Hiroyuki ^{[1
]}

Kondo, Tsuyoshi ^{[1
]}

机构：

[1] Kioxia Corp, Inst Memory Technol Res & Dev, Yokohama, Kanagawa 2350032, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2023年 / 59卷 / 11期

关键词：

Perpendicular magnetic anisotropy; Magnetic domains; Surface treatment; Saturation magnetization; Magnetic tunneling; Magnetic domain walls; Magnetosphere; Atomic layer deposition (ALD); current-induced domain wall motion (CIDWM); Dzyaloshinskii-Moriya interaction (DMI); perpendicular magnetic anisotropy (PMA); spin-orbit torque; NANOPILLARS;

D O I：

10.1109/TMAG.2023.3288159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Successful preparation of perpendicularly magnetized Co thin layers on Pt seed-layers (SLs) using atomic layer deposition (ALD) technique with Co(PF3)(4)H as a precursor is reported. The residual phosphorus content in the samples, due to low deposition temperatures to realize ALD, was reduced effectively by tuning ALD parameters. Spin-orbit-torque-driven current-induced domain wall motion (CIDWM) was observed in the strip containing ALD Co layer prepared with the low phosphorus condition.

引用

页数：5

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