MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors

被引：9

作者：

Litvinov, Artur ^{[1
]}

Etrekova, Maya ^{[1
]}

Podlepetsky, Boris ^{[1
]}

Samotaev, Nikolay ^{[1
]}

Oblov, Konstantin ^{[1
]}

Afanasyev, Alexey ^{[2
]}

Ilyin, Vladimir ^{[2
]}

机构：

[1] Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Micro & Nanoelect Dept, Kashirskoe Highway 31, Moscow 115409, Russia

[2] St Petersburg Electrotech Univ ETU LETI, Engn Ctr Microtechnol & Diagnost, Prof Popova str 5, St Petersburg 197022, Russia

来源：

SENSORS | 2023年 / 23卷 / 07期

基金：

俄罗斯科学基金会;

关键词：

field-effect gas sensor; high-temperature ceramic package; capacitance-voltage characteristic; pulsed laser deposition; silicon technology; gas analysis; HIGH-TEMPERATURE; SENSING PROPERTIES; PERFORMANCE;

D O I：

10.3390/s23073760

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors' structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals' optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta2O5/SiCn+/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors' high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silicon Carbide increases the response rate, while maintaining the sensors' high hydrogen sensitivity. The operating temperature and test signal frequency influence for measuring the sensor's capacitance on the sensitivity to H-2 have been studied.

引用

页数：15

共 40 条

[1] New generation SiC based field effect transistor gas sensors [J].