Analytic Solutions of Drift-Diffusion Equations and Mobility of Organic Semiconductors

被引：1

作者：

Sun, Jiu-Xun ^{[1
]}

Yang, Hong-Chun ^{[1
]}

Li, Yang ^{[1
]}

Cui, Hai-Juan ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Phys, Chengdu 611731, Peoples R China

来源：

PHYSICAL REVIEW APPLIED | 2023年 / 20卷 / 03期

关键词：

CHARGE-CARRIER MOBILITY; TRANSPORT;

D O I：

10.1103/PhysRevApplied.20.034061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Although the drift-diffusion model (DDM) is fundamental in semiconductor physics and related fields, the accurate solution of the DDM is unavailable over a long period of time. The DDM is accurately and analytically solved based on the Fermi-Dirac statistics and general mobility model. The differences in current values, carrier density, and electric field functions between the accurate solution, other solutions, and the standard Scharfetter-Gummel (SG) scheme are evident. The results for mobility extracted from the accurate solution are larger and evidently different from those of the SG scheme, Mott-Gurney equation, and the analytic solution under the uniform-electric-field approximation.

引用

页数：13

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