Preparation and evaluation of Zn(O,S) thin film layer by sulfurization method

被引：4
作者：
Bahrudin, M. S. [1 ]
Arsad, A. Z. [2 ]
Abdullah, S. F. [3 ]
Azman, N., I [1 ]
Chau, C. F. [3 ]
Ahmad, I. [1 ]
Adini, W. S. W. [1 ]
Zuhdi, A. W. Mahmood [2 ]
Abdullah, W. S. Wan [4 ]
机构：
[1] Univ Tenaga Nas, UNITEN R&D Sdn Bhd, Kajang 43000, Selangor, Malaysia
[2] Univ Tenaga Nas, Inst Sustainable Energy, Kajang 43000, Selangor, Malaysia
[3] Univ Tenaga Nas, Coll Engn, Kajang 43000, Selangor, Malaysia
[4] TNB Platinum, TNB Renewables Sdn Bhd, 3 Jalan Bukit Pantai, Kuala Lumpur 591000, Malaysia
来源：
MATERIALS LETTERS | 2023年 / 349卷
关键词：
Structural; Sputtering; Solar energy materials; Thin films;
D O I：
10.1016/j.matlet.2023.134697
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we propose a method of incorporating sulfur on the ZnO film surface, which can effectively alter the properties of the ZnO. Through sulfurization, a ZnS cubic crystal structure is formed in the ZnO film, with the ZnS peak increasing as the sulfur weight increases. This approach may pave the way for the successful production of Zn(O,S) film which may suit as an alternative buffer layer for CIGS solar cell structure.
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页数：4
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